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S25FL512SDSMFBG11

S25FL512SDSMFBG11
Mfr. #:
S25FL512SDSMFBG11
Hersteller:
Cypress Semiconductor
Beschreibung:
Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL512SDSMFBG11 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
S25FL512SDSMFBG11 Mehr Informationen S25FL512SDSMFBG11 Product Details
Produkteigenschaft
Attributwert
Hersteller
Cypress Semiconductor Corp
Produktkategorie
Erinnerung
Serie
FL-S
Verpackung
* Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
SO-16
Betriebstemperatur
-40°C ~ 105°C (TA)
Schnittstelle
SPI-Seriennummer
Spannungsversorgung
2.7 V ~ 3.6 V
Lieferanten-Geräte-Paket
16-SO
Speichergröße
512M (64M x 8)
Speichertyp
FLASH - NOR
Geschwindigkeit
80MHz
Die Architektur
MirrorBit Eclipse
Format-Speicher
BLITZ
Standard
Common Flash-Schnittstelle (CFI)
Oberflächentyp
SPI
Organisation
64 M x 8
Versorgungsstrom-Max
100 mA
Daten-Bus-Breite
8 bit
Versorgungsspannung-Max
3.6 V
Versorgungsspannung-Min
2.7 V
Maximale-Takt-Frequenz
80 MHz
Timing-Typ
Asynchron
Tags
S25FL512SDSMFBG, S25FL512SDSMFB, S25FL512SDSM, S25FL512SDS, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERI
***i-Key
IC FLASH 512M SPI 80MHZ 16SOIC
***ark
TUBE PKGED / 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL512SDSMFBG11
DISTI # S25FL512SDSMFBG11-ND		Cypress SemiconductorIC FLASH 512M SPI 80MHZ 16SOIC
RoHS: Compliant
Min Qty: 94
Container: Tube		Temporarily Out of Stock
  • 94:$8.5576
S25FL512SDSMFBG11
DISTI # 727-S25FL512SDSMFBG1		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1:$11.0000
  • 10:$10.0000
  • 25:$9.2500
  • 50:$8.5000
  • 250:$7.7500
Bild Teil # Beschreibung
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OMO.#: OMO-S25FL512SAGBHV210

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OMO.#: OMO-S25FL512SDSBHI213

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Mfr.#: S25FL512SDPBHV213

OMO.#: OMO-S25FL512SDPBHV213

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S25FL512SAG-AEC13

Mfr.#: S25FL512SAG-AEC13

OMO.#: OMO-S25FL512SAG-AEC13

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S25FL512SAGBHBC13

Mfr.#: S25FL512SAGBHBC13

OMO.#: OMO-S25FL512SAGBHBC13-CYPRESS-SEMICONDUCTOR

 IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGBHM213

Mfr.#: S25FL512SAGBHM213

OMO.#: OMO-S25FL512SAGBHM213-CYPRESS-SEMICONDUCTOR

 IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGMFVG10

Mfr.#: S25FL512SAGMFVG10

OMO.#: OMO-S25FL512SAGMFVG10-CYPRESS-SEMICONDUCTOR

 Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGMFVG13

Mfr.#: S25FL512SAGMFVG13

OMO.#: OMO-S25FL512SAGMFVG13-CYPRESS-SEMICONDUCTOR

 Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGBHIY10

Mfr.#: S25FL512SAGBHIY10

OMO.#: OMO-S25FL512SAGBHIY10-CYPRESS-SEMICONDUCTOR

 IC FLASH 512M SPI 133MHZ 24BGA FL-S
S25FL512SAGMFI013

Mfr.#: S25FL512SAGMFI013

OMO.#: OMO-S25FL512SAGMFI013-CYPRESS-SEMICONDUCTOR

 Flash 512Mb 3V 133MHz Serial NOR Flash
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von S25FL512SDSMFBG11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,62 $
11,62 $
10
11,04 $
110,44 $
100
10,46 $
1 046,25 $
500
9,88 $
4 940,65 $
1000
9,30 $
9 300,00 $
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