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SI4156DY-T1-GE3

SI4156DY-T1-GE3
Mfr. #:
SI4156DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4156DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4156DY-T1-GE3 DatasheetSI4156DY-T1-GE3 Datasheet (P4-P6)SI4156DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4156DY-GE3
Gewichtseinheit:
0.017870 oz
Tags
SI4156, SI415, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SI4156DY-T1-GE3
DISTI # V72:2272_09215535		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R
RoHS: Compliant		2446
  • 1000:$0.3952
  • 500:$0.5010
  • 250:$0.5338
  • 100:$0.5931
  • 25:$0.6938
  • 10:$0.8479
  • 1:$1.0231
SI4156DY-T1-GE3
DISTI # V36:1790_09215535		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.3681
  • 1250000:$0.3683
  • 250000:$0.3785
  • 25000:$0.3944
  • 2500:$0.3969
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 24A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5575In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 24A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5575In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 24A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.3591
  • 12500:$0.3629
  • 5000:$0.3771
  • 2500:$0.3969
SI4156DY-T1-GE3
DISTI # 32899046		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R
RoHS: Compliant		2446
  • 17:$1.0231
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4156DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3205
  • 15000:$0.3294
  • 10000:$0.3387
  • 5000:$0.3531
  • 2500:$0.3639
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R (Alt: SI4156DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4156DY-T1-GE3
    DISTI # 35R6233    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 24A,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:2.2V,Threshold Voltage Vgs:2.2V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 500:$0.5190
    • 250:$0.5610
    • 100:$0.6030
    • 50:$0.6640
    • 25:$0.7250
    • 10:$0.7860
    • 1:$0.9600
    SI4156DY-T1-GE3.
    DISTI # 15AC0295    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:2.2V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:2.5W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 25000:$0.3310
    • 15000:$0.3400
    • 10000:$0.3490
    • 5000:$0.3640
    • 1:$0.3750
    SI4156DY-T1-GE3
    DISTI # 781-SI4156DY-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		5000
    • 1:$0.9400
    • 10:$0.7770
    • 100:$0.5960
    • 500:$0.5130
    • 1000:$0.4040
    • 2500:$0.3770
    • 5000:$0.3590
    • 10000:$0.3510
    SI4156DY-T1-GE3Vishay Intertechnologies 2500
      SI4156DY-T1-GE3
      DISTI # SI4156DY-GE3      		Vishay IntertechnologiesN-Ch 30V 24A 2,5W 0,006R SO8
      RoHS: Compliant      		900
      • 50:€0.3460
      • 100:€0.2860
      • 500:€0.2560
      • 2500:€0.2475
      SI4156DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
      RoHS: Compliant      		Americas -
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1986
        Menge eingeben:
        Der aktuelle Preis von SI4156DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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