PartNumber | SI4154DY-T1-GE3 | SI4153-TP | SI4156DY-T1-GE3 |
Description | MOSFET 40V Vds 20V Vgs SO-8 | MOSFET N-Ch Enh FET 20Vdss 6Vgss 0.9215A 150mW | MOSFET 30V Vds 20V Vgs SO-8 |
Manufacturer | Vishay | Micro Commercial Components (MCC) | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SOT-523-3 | SO-8 |
Tradename | TrenchFET | - | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.75 mm | - | 1.75 mm |
Length | 4.9 mm | - | 4.9 mm |
Series | SI4 | N-Ch Polarity | SI4 |
Width | 3.9 mm | - | 3.9 mm |
Brand | Vishay / Siliconix | Micro Commercial Components (MCC) | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 30000 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI4154DY-GE3 | - | SI4156DY-GE3 |
Unit Weight | 0.006596 oz | - | 0.017870 oz |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 0.915 A | - |
Rds On Drain Source Resistance | - | 570 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 0.45 V | - |
Vgs Gate Source Voltage | - | 4.5 V | - |
Qg Gate Charge | - | 1.82 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 150 mW | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N- Channel | - |
Forward Transconductance Min | - | 0.5 S | - |
Fall Time | - | 7.6 ns | - |
Rise Time | - | 4.4 ns | - |
Typical Turn Off Delay Time | - | 25 ns | - |
Typical Turn On Delay Time | - | 3.7 ns | - |