SI3900DV-T1-E3

Mfr. #:: SI3900DV-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI3900DV-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI3900DV-T1-E3 Datasheet SI3900DV-T1-E3 Datasheet (P4-P6)SI3900DV-T1-E3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: SI3900DV-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TSOP-6

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 2.4 A

Rds On - Drain-Source-Widerstand:: 125 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 600 mV

Vgs - Gate-Source-Spannung:: 12 V

Qg - Gate-Ladung:: 4 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.15 W

Aufbau:: Dual

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI3

Transistortyp:: 2 P-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 5 S

Abfallzeit:: 6 ns

Produktart:: MOSFET

Anstiegszeit:: 30 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 14 ns

Typische Einschaltverzögerungszeit:: 10 ns

Teil # Aliase:: SI3900DV-E3

Gewichtseinheit:: 0.000705 oz

Tags: SI3900DV-T, SI3900, SI390, SI39, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3900DV-T1-E3 Bewertungen und Rezensionen

V***v

Thank you!

2019-01-16

O***k

Product received all perfectly recommend!!

2019-02-08

E***v

Excellent

2019-07-02

SI3900DV-T1-E3 Beschreibung

***ure Electronics: Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6

***et Europe: Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2400mA; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes

***nell: MOSFET, DUAL N CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-

SI3900DV-T1-E3 Mehr Informationen

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI3900DV-T1-E3 DISTI # V72:2272_09216709	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R RoHS: Compliant	829	500:$0.4151 250:$0.5042 100:$0.5244 25:$0.6143 10:$0.7507 1:$0.8536
SI3900DV-T1-E3 DISTI # V36:1790_09216709	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R RoHS: Compliant	0	3000:$0.5236
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	59310In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	59310In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	57000In Stock	30000:$0.2128 15000:$0.2184 6000:$0.2268 3000:$0.2436
SI3900DV-T1-E3 DISTI # 32062116	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R RoHS: Compliant	829	18:$0.8536
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 12000	30000:$0.2559 18000:$0.2629 12000:$0.2709 6000:$0.2819 3000:$0.2909
SI3900DV-T1-E3 DISTI # SI3900DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2249 18000:€0.2419 12000:€0.2619 6000:€0.3039 3000:€0.4459
SI3900DV-T1-E3 DISTI # 65K2704	Vishay Intertechnologies	DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes	0	1000:$0.4430 500:$0.5620 250:$0.6070 100:$0.6520 50:$0.7510 25:$0.8500 1:$1.0300
SI3900DV-T1-E3 DISTI # 70026206	Vishay Siliconix	MOSFET,TSOP6 20V Dual N-Channel (D-S) Trench RoHS: Compliant	0	3000:$0.5440 6000:$0.5220 15000:$0.5110 30000:$0.4900 75000:$0.4680
SI3900DV-T1-E3/BKN DISTI # 70026358	Vishay Siliconix	MOSFET,TSOP6 20V Dual N-Channel (D-S) Trench RoHS: Compliant	0	1:$0.5700 250:$0.5400 500:$0.5100 1000:$0.4800 2000:$0.4600
SI3900DV-T1-E3 DISTI # 781-SI3900DV-E3	Vishay Intertechnologies	MOSFET TSOP6 20V DUAL N-CH (D-S) TREN RoHS: Compliant	16648	1:$1.1100 10:$0.9210 100:$0.7070 500:$0.6080 1000:$0.4790 3000:$0.4470 6000:$0.4250 9000:$0.4160
SI3900DV-T1 DISTI # 781-SI3900DV	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI3900DV-E3 RoHS: Not compliant	0
SI3900DV-T1-E3	Vishay Intertechnologies	2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	281	121:$0.3500 28:$0.5000 1:$1.0000
SI3900DV-T1-E3	Vishay Intertechnologies		2684
SI3900DV-T1-E3 DISTI # 2459244	Vishay Intertechnologies	DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP- RoHS: Compliant	0	500:$0.5220 100:$0.6600 10:$0.8600 1:$0.9800
SI3900DV-T1-E3	Vishay Intertechnologies	MOSFET TSOP6 20V DUAL N-CH (D-S) TREN RoHS: Compliant	Americas -

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: USBLC6-2SC6 OMO.#: OMO-USBLC6-2SC6	TVS Diodes / ESD Suppressors ESD Protection Low Cap
	Mfr.#: TLV61046ADBVR OMO.#: OMO-TLV61046ADBVR	Switching Voltage Regulators TINY BOOST CONVERTER FOR PMOLED AND WLED
	Mfr.#: CC0402KRX7R9BB473 OMO.#: OMO-CC0402KRX7R9BB473	Multilayer Ceramic Capacitors MLCC - SMD/SMT 47000pF 50V 10% 0402 Case Size
	Mfr.#: LSM6DSOXTR OMO.#: OMO-LSM6DSOXTR-STMICROELECTRONICS	INEMO INERTIAL MODULE: 3D ACCELE
	Mfr.#: USBLC6-2SC6 OMO.#: OMO-USBLC6-2SC6-STMICROELECTRONICS	TVS DIODE 5.25V 17V SOT23-6
	Mfr.#: CC0402KRX7R9BB473 OMO.#: OMO-CC0402KRX7R9BB473-YAGEO	Cap Ceramic 0.047uF 50V X7R 10% SMD 0402 125C T/R
	Mfr.#: UJ2-MIBH2-4-SMT-TR OMO.#: OMO-UJ2-MIBH2-4-SMT-TR-CUI	USB JACK 2.0, MICRO B TYPE, 5
	Mfr.#: TLV61046ADBVR OMO.#: OMO-TLV61046ADBVR-TEXAS-INSTRUMENTS	IC REG BOOST ADJ SOT23-6

Verfügbarkeit

Aktie:: 16
Auf Bestellung:: 1999
Menge eingeben:

Der aktuelle Preis von SI3900DV-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,11 $~~; ~~1,11 $~~

10: ~~0,92 $~~; ~~9,21 $~~

100: ~~0,71 $~~; ~~70,70 $~~

500: ~~0,61 $~~; ~~304,00 $~~

1000: ~~0,48 $~~; ~~479,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI3900DV-T 4
SI3900 5
SI390 12
SI39 57
SI3 1735

Neueste Produkte

Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiP32452, SiP32453 Load Switch

Vishay's load switches have a low input logic control threshold and a fast turn on time.
E Series Power MOSFETs

Vishay series of 600 V and 650 V n-channel power MOSFETs have ultra-low maximum on-resistance and a wide range of current ratings.
Compare SI3900DV-T1-E3

SI3900DVT1 vs SI3900DVT1E3 vs SI3900DVT1F3
SIC645A, 60 A, VRPower® Smart Power Stage (SP

Vishay's SIC645A, VRPower® smart power stage (SPS) module is an optimized driver and power stage solution for high-density, synchronous DC/DC power conversion.

More Newest Products