PartNumber | SI3900DV-T1-E3 | SI3900DV-T1-GE3 | SI3905DV-T1-GE3 |
Description | MOSFET TSOP6 20V DUAL N-CH (D-S) TREN | MOSFET 20V Vds 12V Vgs TSOP-6 | MOSFET RECOMMENDED ALT 78-SI3993CDV-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TSOP-6 | - | TSOP-6 |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 2.4 A | - | - |
Rds On Drain Source Resistance | 125 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 4 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.15 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SI3 | SI3 | SI3 |
Transistor Type | 2 P-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 5 S | - | - |
Fall Time | 6 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 30 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | SI3900DV-E3 | SI3900DV-GE3 | SI3905DV-GE3 |
Unit Weight | 0.000705 oz | 0.000705 oz | 0.000705 oz |
Height | - | - | 1.1 mm |
Length | - | - | 3.05 mm |
Width | - | - | 1.65 mm |