SI3900DV-T1-GE3

SI3900DV-T1-GE3
Mfr. #:
SI3900DV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V Vds 12V Vgs TSOP-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3900DV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3900DV-T1-GE3 DatasheetSI3900DV-T1-GE3 Datasheet (P4-P6)SI3900DV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI3900DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI3
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI3900DV-GE3
Gewichtseinheit:
0.000705 oz
Tags
SI3900DV-T, SI3900, SI390, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI3900DV-T1-GE3 Dual N-channel MOSFET Transistor; 2 A; 20 V; 6-Pin TSOP
***ical
Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.125ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3900DV-T1-GE3
DISTI # 32748690
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.2754
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.3763
  • 6000:$0.3910
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # V36:1790_09216710
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.3818
  • 1500000:$0.3820
  • 300000:$0.3925
  • 30000:$0.4090
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2249
  • 18000:€0.2419
  • 12000:€0.2619
  • 6000:€0.3039
  • 3000:€0.4459
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3579
  • 18000:$0.3679
  • 12000:$0.3789
  • 6000:$0.3949
  • 3000:$0.4069
SI3900DV-T1-GE3
DISTI # 35R0064
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 10000:$0.3560
  • 6000:$0.3640
  • 4000:$0.3780
  • 2000:$0.4200
  • 1000:$0.4620
  • 1:$0.4820
SI3900DV-T1-GE3
DISTI # 35R6229
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
  • 1000:$0.4240
  • 500:$0.5380
  • 250:$0.5820
  • 100:$0.6250
  • 50:$0.7200
  • 25:$0.8150
  • 1:$0.9900
SI3900DV-T1-GE3
DISTI # 70616165
Vishay SiliconixSI3900DV-T1-GE3 Dual N-channel MOSFET Transistor,2 A,20 V,6-Pin TSOP
RoHS: Compliant
0
  • 300:$0.6000
  • 600:$0.5000
  • 1500:$0.4600
  • 3000:$0.3800
SI3900DV-T1-GE3
DISTI # 781-SI3900DV-GE3
Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant
2949
  • 1:$0.9700
  • 10:$0.8060
  • 100:$0.6180
  • 500:$0.5320
  • 1000:$0.4190
  • 3000:$0.3910
  • 6000:$0.3720
  • 9000:$0.3640
SI3900DV-T1-GE3
DISTI # 8123170P
Vishay IntertechnologiesTRANS MOSFET N-CH 20V 2A, RL2360
  • 1500:£0.3940
  • 760:£0.4280
  • 160:£0.4650
SI3900DV-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant
Americas -
  • 3000:$0.3980
  • 6000:$0.3780
  • 12000:$0.3660
  • 18000:$0.3560
Bild Teil # Beschreibung
DP83867IRRGZT

Mfr.#: DP83867IRRGZT

OMO.#: OMO-DP83867IRRGZT

Ethernet ICs 10/100/1000 ENET PHY
USB3315C-CP-TR

Mfr.#: USB3315C-CP-TR

OMO.#: OMO-USB3315C-CP-TR

USB Interface IC High Speed USB 1.8V ULPI
MBR230LSFT1G

Mfr.#: MBR230LSFT1G

OMO.#: OMO-MBR230LSFT1G

Schottky Diodes & Rectifiers 2A 30V SCHOTTKY
TPS74401RGWR

Mfr.#: TPS74401RGWR

OMO.#: OMO-TPS74401RGWR

LDO Voltage Regulators 3A LDO w/ Prog Soft-Start
PCAN0603E49R9BST5

Mfr.#: PCAN0603E49R9BST5

OMO.#: OMO-PCAN0603E49R9BST5

Thin Film Resistors - SMD .5watt 49.9ohm 25ppm 0.1% 0603 SMD
0201ZD822KAT2A

Mfr.#: 0201ZD822KAT2A

OMO.#: OMO-0201ZD822KAT2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10volts 8200pF 10% X5R
502598-3393

Mfr.#: 502598-3393

OMO.#: OMO-502598-3393-687

FFC & FPC Connectors 0.3 FPC Bck Flip Hsg Assy33CktEmbsTpPkg
TPS74401RGWR

Mfr.#: TPS74401RGWR

OMO.#: OMO-TPS74401RGWR-TEXAS-INSTRUMENTS

LDO Voltage Regulators 3A LDO w/ Prog Soft-Start
APHHS1005CGCK

Mfr.#: APHHS1005CGCK

OMO.#: OMO-APHHS1005CGCK-KINGBRIGHT

Standard LEDs - SMD GREEN WTR CLEAR 40mcd 574nm
DP83867IRRGZT

Mfr.#: DP83867IRRGZT

OMO.#: OMO-DP83867IRRGZT-TEXAS-INSTRUMENTS

Ethernet ICs 10/100/1000 ENET PHY
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SI3900DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,97 $
0,97 $
10
0,81 $
8,06 $
100
0,62 $
61,80 $
500
0,53 $
266,00 $
1000
0,42 $
419,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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