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SI3900DV-T1-E3

SI3900DV-T1-E3
Mfr. #:
SI3900DV-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET 2N-CH 20V 2A 6-TSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3900DV-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3900DV-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI3900DV-T, SI3900, SI390, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2400mA; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes
***nell
MOSFET, DUAL N CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3900DV-T1-E3
DISTI # V72:2272_09216709		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant		829
  • 500:$0.4151
  • 250:$0.5042
  • 100:$0.5244
  • 25:$0.6143
  • 10:$0.7507
  • 1:$0.8536
SI3900DV-T1-E3
DISTI # V36:1790_09216709		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000:$0.5236
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		59310In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		59310In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		57000In Stock
  • 30000:$0.2128
  • 15000:$0.2184
  • 6000:$0.2268
  • 3000:$0.2436
SI3900DV-T1-E3
DISTI # 32062116		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant		829
  • 18:$0.8536
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 12000
  • 30000:$0.2559
  • 18000:$0.2629
  • 12000:$0.2709
  • 6000:$0.2819
  • 3000:$0.2909
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.2249
  • 18000:€0.2419
  • 12000:€0.2619
  • 6000:€0.3039
  • 3000:€0.4459
SI3900DV-T1-E3
DISTI # 65K2704		Vishay IntertechnologiesDUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes0
  • 1000:$0.4430
  • 500:$0.5620
  • 250:$0.6070
  • 100:$0.6520
  • 50:$0.7510
  • 25:$0.8500
  • 1:$1.0300
SI3900DV-T1-E3
DISTI # 70026206		Vishay SiliconixMOSFET,TSOP6 20V Dual N-Channel (D-S) Trench
RoHS: Compliant		0
  • 3000:$0.5440
  • 6000:$0.5220
  • 15000:$0.5110
  • 30000:$0.4900
  • 75000:$0.4680
SI3900DV-T1-E3/BKN
DISTI # 70026358		Vishay SiliconixMOSFET,TSOP6 20V Dual N-Channel (D-S) Trench
RoHS: Compliant		0
  • 1:$0.5700
  • 250:$0.5400
  • 500:$0.5100
  • 1000:$0.4800
  • 2000:$0.4600
SI3900DV-T1-E3
DISTI # 781-SI3900DV-E3		Vishay IntertechnologiesMOSFET TSOP6 20V DUAL N-CH (D-S) TREN
RoHS: Compliant		16648
  • 1:$1.1100
  • 10:$0.9210
  • 100:$0.7070
  • 500:$0.6080
  • 1000:$0.4790
  • 3000:$0.4470
  • 6000:$0.4250
  • 9000:$0.4160
SI3900DV-T1
DISTI # 781-SI3900DV		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI3900DV-E3
RoHS: Not compliant		0
    SI3900DV-T1-E3Vishay Intertechnologies2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET281
    • 121:$0.3500
    • 28:$0.5000
    • 1:$1.0000
    SI3900DV-T1-E3Vishay Intertechnologies 2684
      SI3900DV-T1-E3
      DISTI # 2459244      		Vishay IntertechnologiesDUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-
      RoHS: Compliant      		0
      • 500:$0.5220
      • 100:$0.6600
      • 10:$0.8600
      • 1:$0.9800
      SI3900DV-T1-E3Vishay IntertechnologiesMOSFET TSOP6 20V DUAL N-CH (D-S) TREN
      RoHS: Compliant      		Americas -
        Bild Teil # Beschreibung
        SI3900DV-T1-E3

        Mfr.#: SI3900DV-T1-E3

        OMO.#: OMO-SI3900DV-T1-E3

        		 MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
        SI3900DV-T1-GE3

        Mfr.#: SI3900DV-T1-GE3

        OMO.#: OMO-SI3900DV-T1-GE3

        		 MOSFET 20V Vds 12V Vgs TSOP-6
        SI3900DV

        Mfr.#: SI3900DV

        OMO.#: OMO-SI3900DV-1190

        		 Neu und Original
        SI3900DV-T1

        Mfr.#: SI3900DV-T1

        OMO.#: OMO-SI3900DV-T1-1190

        		 MOSFET RECOMMENDED ALT 781-SI3900DV-E3
        SI3900DV-T1-E3

        Mfr.#: SI3900DV-T1-E3

        OMO.#: OMO-SI3900DV-T1-E3-VISHAY

        		 MOSFET 2N-CH 20V 2A 6-TSOP
        SI3900DV-T1-F3

        Mfr.#: SI3900DV-T1-F3

        OMO.#: OMO-SI3900DV-T1-F3-1190

        		 Neu und Original
        SI3900DV-T1-GE3

        Mfr.#: SI3900DV-T1-GE3

        OMO.#: OMO-SI3900DV-T1-GE3-VISHAY

        		 MOSFET 2N-CH 20V 2A 6-TSOP
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von SI3900DV-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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