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SI4890BDY-T1-GE3

SI4890BDY-T1-GE3
Mfr. #:
SI4890BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4890BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4890BDY-T1-GE3 DatasheetSI4890BDY-T1-GE3 Datasheet (P4-P6)SI4890BDY-T1-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4890BDY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4890, SI489, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si4890BDY Series N-Channel 30 V 12 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:10.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 16A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.5852
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4890BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5529
  • 5000:$0.5359
  • 10000:$0.5139
  • 15000:$0.4999
  • 25000:$0.4869
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R (Alt: SI4890BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.7209
  • 5000:€0.4919
  • 10000:€0.4229
  • 15000:€0.3909
  • 25000:€0.3639
SI4890BDY-T1-GE3
DISTI # 781-SI4890BDY-T1-GE3		Vishay IntertechnologiesMOSFET 30V 16A 5.7W 12mohm @ 10V
RoHS: Compliant		0
    Bild Teil # Beschreibung
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3

    		 MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    SI4890BDY-T1-E3

    Mfr.#: SI4890BDY-T1-E3

    OMO.#: OMO-SI4890BDY-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von SI4890BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,32 $
    1,32 $
    10
    1,09 $
    10,90 $
    100
    0,84 $
    84,00 $
    500
    0,72 $
    361,50 $
    1000
    0,57 $
    570,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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