IPDD60R080G7XTMA1

IPDD60R080G7XTMA1
Mfr. #:
IPDD60R080G7XTMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET NCH 650V 83A PG-HDSOP-10
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPDD60R080G7XTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPDD60R080G7XTMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPDD60R0, IPDD6, IPDD, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 80 mOhm 42 nC CoolMOS™ G7 Power Transistor - HDSOP-10
***ical
Trans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R
***i-Key
MOSFET NCH 650V 83A PG-HDSOP-10
***ronik
N-CH 600V 29A 69mOhm HDSOP-10
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 29A, Hdsop; Transistor Polarity:n Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, HDSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:174W; Transistor Case Style:HDSOP; No. of Pins:10Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Gold Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 29A, HDSOP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:174W; Modello Case Transistor:HDSOP; No. di Pin:10Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Gold Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
Teil # Mfg. Beschreibung Aktie Preis
IPDD60R080G7XTMA1
DISTI # V72:2272_19084634
Infineon Technologies AGTrans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R1253
  • 1000:$3.3860
  • 500:$3.7920
  • 250:$4.2580
  • 100:$4.3240
  • 25:$5.0270
  • 10:$5.3740
  • 1:$6.5395
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1CT-ND
Infineon Technologies AGMOSFET NCH 650V 83A PG-HDSOP-10
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
446In Stock
  • 500:$4.2168
  • 100:$4.8425
  • 10:$5.8490
  • 1:$6.4700
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1DKR-ND
Infineon Technologies AGMOSFET NCH 650V 83A PG-HDSOP-10
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
446In Stock
  • 500:$4.2168
  • 100:$4.8425
  • 10:$5.8490
  • 1:$6.4700
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1TR-ND
Infineon Technologies AGMOSFET NCH 650V 83A PG-HDSOP-10
RoHS: Compliant
Min Qty: 1700
Container: Tape & Reel (TR)
On Order
  • 1700:$3.5657
IPDD60R080G7XTMA1
DISTI # 31299832
Infineon Technologies AGTrans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R1700
  • 3400:$3.0033
  • 1700:$3.2373
IPDD60R080G7XTMA1
DISTI # 32446493
Infineon Technologies AGTrans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R1253
  • 2:$6.5395
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1
Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPDD60R080G7XTMA1)
RoHS: Compliant
Min Qty: 1700
Container: Reel
Americas - 0
  • 17000:$3.0900
  • 10200:$3.1900
  • 6800:$3.2900
  • 3400:$3.3900
  • 1700:$3.5900
IPDD60R080G7XTMA1
DISTI # SP001632824
Infineon Technologies AGHIGH POWER_NEW (Alt: SP001632824)
RoHS: Compliant
Min Qty: 1700
Europe - 0
  • 17000:€2.8900
  • 10200:€3.0900
  • 6800:€3.1900
  • 3400:€3.5900
  • 1700:€4.3900
IPDD60R080G7XTMA1
DISTI # 59AC7040
Infineon Technologies AGMOSFET, N-CH, 600V, 29A, HDSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes917
  • 1000:$3.4200
  • 500:$3.9300
  • 250:$4.3100
  • 100:$4.5100
  • 50:$4.8600
  • 25:$5.2000
  • 10:$5.4500
  • 1:$6.0400
IPDD60R080G7XTMA1
DISTI # 726-IPDD60R080G7XTM1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
243
  • 1:$5.9800
  • 10:$5.4000
  • 25:$5.1500
  • 100:$4.4700
  • 250:$4.2700
  • 500:$3.8900
  • 1000:$3.3900
  • 1700:$3.2700
IPDD60R080G7XTMA1Infineon Technologies AG650V, 83A, 80mOhms, DDPAK
RoHS: Compliant
26Cut Tape/Mini-Reel
  • 1:$5.2500
  • 50:$4.0600
  • 100:$3.8800
  • 250:$3.6500
  • 500:$3.4900
IPDD60R080G7XTMA1
DISTI # XSKDRABV0051069
Infineon Technologies AG 
RoHS: Compliant
5100 in Stock0 on Order
  • 5100:$4.4100
  • 1700:$4.7200
IPDD60R080G7XTMA1
DISTI # 2888462
Infineon Technologies AGMOSFET, N-CH, 600V, 29A, HDSOP
RoHS: Compliant
917
  • 1000:$5.0400
  • 500:$5.1400
  • 250:$5.4200
  • 100:$5.7300
  • 10:$6.4800
  • 1:$6.9300
IPDD60R080G7XTMA1
DISTI # 2888462
Infineon Technologies AGMOSFET, N-CH, 600V, 29A, HDSOP937
  • 500:£2.8500
  • 250:£3.1300
  • 100:£3.2700
  • 10:£3.7700
  • 1:£4.8400
Bild Teil # Beschreibung
IPDD60R050G7XTMA1

Mfr.#: IPDD60R050G7XTMA1

OMO.#: OMO-IPDD60R050G7XTMA1

MOSFET HIGH POWER_NEW
IPDD60R080G7XTMA1

Mfr.#: IPDD60R080G7XTMA1

OMO.#: OMO-IPDD60R080G7XTMA1

MOSFET HIGH POWER_NEW
IPDD60R080G7XTMA1

Mfr.#: IPDD60R080G7XTMA1

OMO.#: OMO-IPDD60R080G7XTMA1-INFINEON-TECHNOLOGIES

MOSFET NCH 650V 83A PG-HDSOP-10
IPDD60R050G7XTMA1-CUT TAPE

Mfr.#: IPDD60R050G7XTMA1-CUT TAPE

OMO.#: OMO-IPDD60R050G7XTMA1-CUT-TAPE-1190

Neu und Original
IPDD60R080G7XTMA1-CUT TAPE

Mfr.#: IPDD60R080G7XTMA1-CUT TAPE

OMO.#: OMO-IPDD60R080G7XTMA1-CUT-TAPE-1190

Neu und Original
IPDD60R050G7

Mfr.#: IPDD60R050G7

OMO.#: OMO-IPDD60R050G7-1190

Transistor MOSFET N-CH 600V 47A 10-Pin HDSOP T/R (Alt: IPDD60R050G7)
IPDD60R050G7XTMA1

Mfr.#: IPDD60R050G7XTMA1

OMO.#: OMO-IPDD60R050G7XTMA1-INFINEON-TECHNOLOGIES

MOSFET NCH 650V 135A PG-HDSOP-10
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von IPDD60R080G7XTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,64 $
4,64 $
10
4,40 $
44,03 $
100
4,17 $
417,15 $
500
3,94 $
1 969,90 $
1000
3,71 $
3 708,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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