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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FQP8N60C DISTI # FQP8N60C-ND | ON Semiconductor | MOSFET N-CH 600V 7.5A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube | 948In Stock |
|
| FQP8N60C DISTI # FQP8N60C | ON Semiconductor | Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N60C) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| FQP8N60C DISTI # 97K0198 | ON Semiconductor | MOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:147W,MSL:- RoHS Compliant: Yes | 0 | |
| FQP8N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 43736 |
|
| FQP8N60C DISTI # 512-FQP8N60C | ON Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series RoHS: Compliant | 924 |
|
| FQP8N60C_Q DISTI # 512-FQP8N60C_Q | ON Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series RoHS: Not compliant | 0 | |
| FQP8N60C DISTI # 1095074 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 37 |
|
| FQP8N60C DISTI # 1095074 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 47 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: FQP8N60C OMO.#: OMO-FQP8N60C |
MOSFET 600V N-Ch Q-FET advance C-Series |
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Mfr.#: FQP8N60 OMO.#: OMO-FQP8N60-1190 |
Neu und Original |
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Mfr.#: FQP8N60C,8N60 OMO.#: OMO-FQP8N60C-8N60-1190 |
Neu und Original |
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Mfr.#: FQP8N60C,8N60C, OMO.#: OMO-FQP8N60C-8N60C--1190 |
Neu und Original |
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Mfr.#: FQP8N60N OMO.#: OMO-FQP8N60N-1190 |
Neu und Original |
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Mfr.#: FQP8N65C OMO.#: OMO-FQP8N65C-1190 |
Neu und Original |
|
Mfr.#: FQP8N60C |
IGBT Transistors MOSFET 600V N-Ch Q-FET advance C-Series |
|
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Mfr.#: FQP8N60C_Q OMO.#: OMO-FQP8N60C-Q-1190 |
MOSFET 600V N-Ch Q-FET advance C-Series |