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IXFN80N50Q3

IXFN80N50Q3
Mfr. #:
IXFN80N50Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN80N50Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN80N50Q3 DatasheetIXFN80N50Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN80N50Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
63 A
Rds On - Drain-Source-Widerstand:
65 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
200 nC
Pd - Verlustleistung:
780 W
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFN80N50
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
250 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Gewichtseinheit:
1.058219 oz
Tags
IXFN80N5, IXFN80, IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***trelec
MOSFET Module, Single - N-Channel, 500V, 63A, 780W, SOT-227B
***nell
MOSFET MODULE, N-CH, 500V, 63A, SOT-227
***ource
HiperFET Power MOSFET Q3-Class
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
Mosfet Module, N-Ch, 500V, 63A, Sot-227; Transistor Polarity:n Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.065Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Power Rohs Compliant: Yes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFN80N50Q3
DISTI # V36:1790_15877457		IXYS CorporationTrans MOSFET N-CH 500V 63A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN80N50Q3
    DISTI # IXFN80N50Q3-ND    		IXYS CorporationMOSFET N-CH 500V 63A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		14In Stock
    • 100:$30.7626
    • 30:$33.0990
    • 10:$36.0200
    • 1:$38.9400
    IXFN80N50Q3
    DISTI # 747-IXFN80N50Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
    RoHS: Compliant    		11
    • 1:$38.9300
    • 5:$36.9900
    • 10:$36.0200
    • 25:$33.1000
    • 50:$31.6900
    • 100:$30.7600
    • 200:$28.2300
    IXFN80N50Q3
    DISTI # 8047583    		IXYS CorporationMOSFET N-CH 500V 63A Q3 HIPERFET SOT227B, EA15
    • 10:£20.0400
    • 1:£20.5400
    IXFN80N50Q3
    DISTI # 2674762    		IXYS CorporationMOSFET MODULE, N-CH, 500V, 63A, SOT-227
    RoHS: Compliant    		0
    • 100:£21.9700
    • 50:£24.6600
    • 10:£25.7700
    • 5:£28.7800
    • 1:£29.7400
    IXFN80N50Q3
    DISTI # 2674762    		IXYS CorporationMOSFET MODULE, N-CH, 500V, 63A, SOT-227
    RoHS: Compliant    		0
    • 100:$46.9600
    • 10:$54.9700
    • 1:$59.4200
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    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von IXFN80N50Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    38,93 $
    38,93 $
    5
    36,99 $
    184,95 $
    10
    36,02 $
    360,20 $
    25
    33,10 $
    827,50 $
    50
    31,69 $
    1 584,50 $
    100
    30,76 $
    3 076,00 $
    200
    28,23 $
    5 646,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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