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IRFL4315TRPBF
IRFL4315TRPBF
Die Zustellung:
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HTML Datasheet:
IRFL4315TRPBF DatasheetIRFL4315TRPBF Datasheet (P4-P6)IRFL4315TRPBF Datasheet (P7-P8)

IRFL4315TRPBF

Mfr. #:
IRFL4315TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 150V 2.6A 185mOhm 12nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFL4315TRPBF Datenblatt
ECAD Model:

Verfügbarkeit

Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von IRFL4315TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Menge
Stückpreis
ext. Preis
1
0,75 $
0,75 $
10
0,62 $
6,24 $
100
0,40 $
40,30 $
1000
0,32 $
323,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
2.6 A
Rds On - Drain-Source-Widerstand:
185 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
12 nC
Pd - Verlustleistung:
2.8 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.6 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
3.5 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001556696
Gewichtseinheit:
0.003951 oz
Tags
IRFL4315T, IRFL4315, IRFL43, IRFL4, IRFL, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 150V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 150V 2.6A SOT223
***ure Electronics
Single N-Channel 150 V 185 mOhm 12 nC HEXFET® Power Mosfet - SOT-223
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 185 Milliohms,ID 2.6A,SOT-223,PD 2.8W,-55C
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***roFlash
Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, N, 150V, 2.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.185ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.6 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.8
***emi
Power MOSFET, N-Channel, QFET®, 60 V, 2.8 A, 140 mΩ, SOT-223
***ure Electronics
N-Channel 60 V 0.14 Ohm Surface Mount Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***nell
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.11ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ure Electronics
FDT86244 Series 150 V 128 mOhm N.Ch. SMT PowerTrench Mosfet - SOT-223-3
***emi
N-Channel Power Trench® MOSFET 150V, 2.8A, 128mΩ
***Yang
Trans MOSFET N-CH 150V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, N CH, 150V, 2.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:4V
***va Crawler
P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package
***ure Electronics
STN3P6F6 Series 60 V 130 mOhm P-Channel STripFET™ VI DeepGATE™ Mosfet - SOT-223
***ment14 APAC
MOSFET, P-CH, -60V, -3A, SOT-223-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Source Voltage Vds:-60V; On Resistance
***nell
MOSFET, P-CH, -60V, -3A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -3A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.6W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: DeepGATE STripFET VI Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ
*** Source Electronics
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223
***ure Electronics
N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin (3+Tab) SOT-223
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:2.7A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:SOT-223 ;RoHS Compliant: Yes
***nsix Microsemi
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, N, 60V, 2.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 2.7A; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 120°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Pulse Current Idm: 22A; SMD Marking: LL014; Tape Width: 12mm; Voltage Vds Typ: 60V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V
Teil # Mfg. Beschreibung Aktie Preis
IRFL4315TRPBF
DISTI # V72:2272_13890701		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R1425
  • 1000:$0.2484
  • 500:$0.3274
  • 250:$0.3309
  • 100:$0.3498
  • 25:$0.4709
  • 10:$0.4943
  • 1:$0.5815
IRFL4315TRPBF
DISTI # IRFL4315TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 150V 2.6A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12418In Stock
  • 1000:$0.4043
  • 500:$0.4955
  • 100:$0.6552
  • 10:$0.8370
  • 1:$0.9500
IRFL4315TRPBF
DISTI # IRFL4315TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 150V 2.6A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12418In Stock
  • 1000:$0.4043
  • 500:$0.4955
  • 100:$0.6552
  • 10:$0.8370
  • 1:$0.9500
IRFL4315TRPBF
DISTI # IRFL4315TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V 2.6A SOT223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.3593
IRFL4315TRPBF
DISTI # 31067823		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R12500
  • 2500:$0.2246
IRFL4315TRPBF
DISTI # 30605107		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R1460
  • 100:$0.4921
  • 50:$0.6018
  • 29:$0.9040
IRFL4315TRPBF
DISTI # 30331794		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R1425
  • 1000:$0.2484
  • 500:$0.3274
  • 250:$0.3309
  • 100:$0.3498
  • 28:$0.4709
IRFL4315TRPBF
DISTI # IRFL4315TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: IRFL4315TRPBF)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 12500
  • 2500:$0.2577
  • 5000:$0.2471
  • 7500:$0.2438
  • 12500:$0.2343
  • 25000:$0.2313
  • 62500:$0.2255
  • 125000:$0.2200
IRFL4315TRPBF
DISTI # IRFL4315TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRFL4315TRPBF)
RoHS: Compliant
Min Qty: 1
Container: Reel		Americas - 0
  • 1:$0.2329
  • 10:$0.2299
  • 25:$0.2259
  • 50:$0.2229
  • 100:$0.2149
  • 500:$0.2079
  • 1000:$0.2039
IRFL4315TRPBF
DISTI # SP001556696		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: SP001556696)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.3399
  • 5000:€0.2779
  • 10000:€0.2549
  • 15000:€0.2349
  • 25000:€0.2179
IRFL4315TRPBF
DISTI # 13AC9118		Infineon Technologies AGMOSFET, N-CH, 150V, 2.6A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.185ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes4209
  • 1:$0.8040
  • 10:$0.6700
  • 25:$0.5970
  • 50:$0.5250
  • 100:$0.4520
  • 250:$0.4260
  • 500:$0.4000
  • 1000:$0.3730
IRFL4315TRPBF
DISTI # 70018988		Infineon Technologies AGIRFL4315TRPBF N-channel MOSFET Module,2.6 A,150 V,3 + Tab-Pin SOT-223
RoHS: Compliant		0
  • 10:$0.8000
IRFL4315TRPBFInfineon Technologies AGSingle N-Channel 150V 185 mOhm 12 nC HEXFET Power Mosfet - SOT-223
RoHS: Compliant		20000Reel
  • 2500:$0.2500
IRFL4315TRPBF
DISTI # 942-IRFL4315TRPBF		Infineon Technologies AGMOSFET MOSFT 150V 2.6A 185mOhm 12nC
RoHS: Compliant		2002
  • 1:$0.7600
  • 10:$0.6240
  • 100:$0.4030
  • 1000:$0.3230
IRFL4315TRPBF
DISTI # 8655822P		Infineon Technologies AGMOSFET N-CH 150V 2.6A HEXFET SMPS SOT223, RL2580
  • 250:£0.4110
  • 500:£0.3630
  • 1000:£0.3150
  • 2500:£0.3090
IRFL4315TRPBFInternational Rectifier 1649
  • 1170:$0.5990
  • 235:$0.6846
  • 1:$1.7115
IRFL4315TRPBF
DISTI # C1S322000491706		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		1845
  • 250:$0.3317
  • 100:$0.3432
  • 25:$0.4784
  • 10:$0.4806
IRFL4315TRPBF
DISTI # C1S322000491715		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		1460
  • 100:$0.3860
  • 50:$0.4720
  • 10:$0.7090
IRFL4315TRPBF
DISTI # C1S322000491690		Infineon Technologies AGTrans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		10000
  • 2500:$0.3980
IRFL4315TRPBF
DISTI # XSFP00000050504		Infineon Technologies AG 
RoHS: Compliant		20190
  • 2500:$0.5700
  • 20190:$0.5182
IRFL4315TRPBF
DISTI # 2725947		Infineon Technologies AGMOSFET, N-CH, 150V, 2.6A, SOT-223
RoHS: Compliant		4209
  • 1:$1.4500
  • 10:$1.2800
  • 100:$0.9820
  • 500:$0.7280
  • 1000:$0.5820
IRFL4315TRPBF
DISTI # 2725947		Infineon Technologies AGMOSFET, N-CH, 150V, 2.6A, SOT-223
RoHS: Compliant		4264
  • 5:£0.4940
  • 25:£0.4030
  • 100:£0.3110
  • 250:£0.2890
  • 500:£0.2680
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