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IPB60R190C6

IPB60R190C6
Mfr. #:
IPB60R190C6
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R190C6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB60R190C6 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
20.2 A
Rds On - Drain-Source-Widerstand:
170 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
63 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
151 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
CoolMOS C6
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
110 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
IPB60R190C6ATMA1 IPB6R19C6XT SP000641916
Gewichtseinheit:
0.139332 oz
Tags
IPB60R190C, IPB60R190, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$1.6261
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
  • 500:$1.9859
  • 100:$2.4525
  • 10:$2.9910
  • 1:$3.3500
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
  • 500:$1.9859
  • 100:$2.4525
  • 10:$2.9910
  • 1:$3.3500
IPB60R190C6
DISTI # IPB60R190C6		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
    IPB60R190C6
    DISTI # SP000641916    		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.6900
    • 2000:€1.3900
    • 4000:€1.2900
    • 6000:€1.1900
    • 10000:€1.0900
    IPB60R190C6
    DISTI # SP000641916    		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.1900
    • 2000:€1.1900
    • 4000:€1.1900
    • 6000:€1.1900
    • 10000:€1.1900
    IPB60R190C6XT
    DISTI # IPB60R190C6ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R190C6ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$1.4900
    • 2000:$1.3900
    • 4000:$1.3900
    • 6000:$1.2900
    • 10000:$1.2900
    IPB60R190C6ATMA1
    DISTI # 30T1830    		Infineon Technologies AGMOSFET,N CH,600V,20.2A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
    • 1:$2.8600
    • 10:$2.4300
    • 100:$1.9500
    • 500:$1.8000
    • 1000:$1.6200
    • 2500:$1.3100
    • 5000:$1.2700
    IPB60R190C6
    DISTI # 726-IPB60R190C6    		Infineon Technologies AGMOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
    RoHS: Compliant    		0
    • 1:$2.8000
    • 10:$2.3800
    • 100:$2.0600
    • 250:$1.9600
    • 500:$1.7600
    • 1000:$1.4800
    IPB60R190C6ATMA1
    DISTI # 726-IPB60R190C6ATMA1    		Infineon Technologies AGMOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
    RoHS: Compliant    		0
    • 1:$2.8000
    • 10:$2.3800
    • 100:$2.0600
    • 250:$1.9600
    • 500:$1.7600
    • 1000:$1.4800
    IPB60R190C6Infineon Technologies AGPower Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		3
    • 1000:$1.2800
    • 500:$1.3400
    • 100:$1.4000
    • 25:$1.4600
    • 1:$1.5700
    IPB60R190C6ATMA1
    DISTI # 7533005P    		Infineon Technologies AGMOSFET N-CH 650V 20.2A COOLMOS C6 TO263, RL200
    • 10:£1.8200
    • 50:£1.6400
    • 250:£1.4600
    • 500:£1.2800
    IPB60R190C6ATMA1
    DISTI # IPB60R190C6ATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO263-3133
    • 1:$2.9700
    • 3:$2.5500
    • 10:$2.0500
    • 100:$1.7800
    IPB60R190C6Infineon Technologies AG600V,20.2A,N channel Power MOSFET7
    • 1:$2.3200
    • 100:$1.9400
    • 500:$1.7100
    • 1000:$1.6600
    IPB60R190C6ATMA1
    DISTI # 1860814    		Infineon Technologies AGMOSFET,N CH,600V,20.2A,TO263
    RoHS: Compliant    		0
    • 1:£2.5700
    • 10:£1.7500
    • 100:£1.6500
    • 250:£1.5600
    • 500:£1.3700
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von IPB60R190C6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,79 $
    2,79 $
    10
    2,37 $
    23,70 $
    100
    2,06 $
    206,00 $
    250
    1,95 $
    487,50 $
    500
    1,75 $
    875,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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