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| PartNumber | IPB60R190C6 | IPB60R190C6ATMA1 | IPB60R190P6ATMA1 |
| Description | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | MOSFET N-CH 600V TO263-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 20.2 A | 20.2 A | - |
| Rds On Drain Source Resistance | 170 mOhms | 170 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 63 nC | 63 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 151 W | 151 W | - |
| Configuration | Single | Single | 1 N-Channel |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | CoolMOS C6 | CoolMOS C6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 9 ns | 9 ns | 7 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | 8 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 110 ns | 110 ns | 45 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns | 15 ns |
| Part # Aliases | IPB60R190C6ATMA1 IPB6R19C6XT SP000641916 | IPB60R190C6 IPB6R19C6XT SP000641916 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.068654 oz |
| Part Aliases | - | - | IPB60R190P6 SP001364462 |
| Package Case | - | - | TO-263-3 |
| Pd Power Dissipation | - | - | 151 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 20.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3.5 V |
| Rds On Drain Source Resistance | - | - | 445 mOhms |
| Qg Gate Charge | - | - | 37 nC |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB60R190C6 | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | |
| IPB60R190C6ATMA1 | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | ||
| IPB60R190C6ATMA1 | MOSFET N-CH 600V 20.2A TO263 | ||
| IPB60R190P6ATMA1 | MOSFET N-CH 600V TO263-3 | ||
| IPB60R190C6 6R190C6 | Neu und Original | ||
| IPB60R190C6 | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6) | ||
| IPB60R190C6 (6R190C6) | Neu und Original | ||
| IPB60R190C6S | Neu und Original | ||
| IPB60R190P6 | MOSFET HIGH POWER_LEGACY |