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IPB60R190P6ATMA1

IPB60R190P6ATMA1
Mfr. #:
IPB60R190P6ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 600V TO263-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R190P6ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
IPB60R190P6 SP001364462
Gewichtseinheit
0.068654 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-3
Technologie
Si
Aufbau
1 N-Channel
Pd-Verlustleistung
151 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
7 ns
Anstiegszeit
8 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
20.2 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Rds-On-Drain-Source-Widerstand
445 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
45 ns
Typische-Einschaltverzögerungszeit
15 ns
Qg-Gate-Ladung
37 nC
Kanal-Modus
Erweiterung
Tags
IPB60R190, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 190 mOhm 37 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Teil # Mfg. Beschreibung Aktie Preis
IPB60R190P6ATMA1
DISTI # V72:2272_09156918		Infineon Technologies AGTrans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		299
  • 75000:$1.0948
  • 30000:$1.1870
  • 15000:$1.3189
  • 6000:$1.3272
  • 3000:$1.3395
  • 1000:$1.3463
  • 500:$1.3766
  • 250:$1.5367
  • 100:$1.7045
  • 50:$1.8171
  • 25:$2.1126
  • 10:$2.1988
  • 1:$2.7325
IPB60R190P6ATMA1
DISTI # IPB60R190P6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R190P6ATMA1
    DISTI # IPB60R190P6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R190P6ATMA1
      DISTI # IPB60R190P6ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R190P6ATMA1
        DISTI # 26196097        		Infineon Technologies AGTrans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant        		299
        • 6:$2.7325
        IPB60R190P6ATMA1
        DISTI # SP001364462        		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin TO-263 T/R (Alt: SP001364462)
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape and Reel        		Europe - 0
        • 6000:€1.0900
        • 10000:€1.0900
        • 4000:€1.1900
        • 2000:€1.4900
        • 1000:€1.8900
        IPB60R190P6ATMA1
        DISTI # 726-IPB60R190P6ATMA1        		Infineon Technologies AGMOSFET HIGH POWER_LEGACY
        RoHS: Compliant        		0
        • 1:$2.6500
        • 10:$2.2500
        • 100:$1.8000
        • 500:$1.5800
        • 1000:$1.3100
        • 2000:$1.2200
        • 5000:$1.1700
        Bild Teil # Beschreibung
        IPB60R190C6ATMA1

        Mfr.#: IPB60R190C6ATMA1

        OMO.#: OMO-IPB60R190C6ATMA1

        		 MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
        IPB60R199CP

        Mfr.#: IPB60R199CP

        OMO.#: OMO-IPB60R199CP

        		 MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
        IPB60R190C6 6R190C6

        Mfr.#: IPB60R190C6 6R190C6

        OMO.#: OMO-IPB60R190C6-6R190C6-1190

        		 Neu und Original
        IPB60R190C6 (6R190C6)

        Mfr.#: IPB60R190C6 (6R190C6)

        OMO.#: OMO-IPB60R190C6-6R190C6--1190

        		 Neu und Original
        IPB60R190C6S

        Mfr.#: IPB60R190C6S

        OMO.#: OMO-IPB60R190C6S-1190

        		 Neu und Original
        IPB60R190P6

        Mfr.#: IPB60R190P6

        OMO.#: OMO-IPB60R190P6-1190

        		 MOSFET HIGH POWER_LEGACY
        IPB60R190P6ATMA1

        Mfr.#: IPB60R190P6ATMA1

        OMO.#: OMO-IPB60R190P6ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 600V TO263-3
        IPB60R199CP

        Mfr.#: IPB60R199CP

        OMO.#: OMO-IPB60R199CP-1190

        		 Trans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: IPB60R199CP)
        IPB60R199CPATMA1

        Mfr.#: IPB60R199CPATMA1

        OMO.#: OMO-IPB60R199CPATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V 16A TO-263
        IPB60R199CR

        Mfr.#: IPB60R199CR

        OMO.#: OMO-IPB60R199CR-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von IPB60R190P6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,64 $
        1,64 $
        10
        1,56 $
        15,60 $
        100
        1,48 $
        147,80 $
        500
        1,40 $
        697,95 $
        1000
        1,31 $
        1 313,80 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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