GS8342DT10BGD-350I

GS8342DT10BGD-350I
Mfr. #:
GS8342DT10BGD-350I
Hersteller:
GSI Technology
Beschreibung:
SRAM 1.8 or 1.5V 4M x 9 36M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS8342DT10BGD-350I Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS8342DT10BGD-350I Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
36 Mbit
Organisation:
4 M x 9
Maximale Taktfrequenz:
350 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.9 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
675 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-165
Verpackung:
Tablett
Speichertyp:
QDR-II
Serie:
GS8342DT10BGD
Typ:
SigmaQuad-II+ B4
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
15
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SigmaQuad-II+
Tags
GS8342DT10BGD-3, GS8342DT10BG, GS8342DT10, GS8342DT1, GS8342DT, GS8342D, GS834, GS83, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V 36M-Bit 4M x 9-Bit 0.45ns 165-Pin FBGA
***et Europe
SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
2M X 18 QDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 36MBIT PARALLEL 165FBGA
***pmh
DUAL-PORT SRAM, 8KX16, 25NS, CMO
***ical
SRAM Chip Sync Dual 1.8V 36M-bit 2M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
2M X 18 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 36MBIT PARALLEL 165FBGA
***or
DDR SRAM, 2MX18, 0.45NS, CMOS, P
***ure Electronics
CY7C1420KV18 Series 36 Mb (1 M x 36) 1.7 - 1.9 V DDR II SRAM - FBGA-165
***et
SRAM Chip Sync Single 1.8V 36M-Bit 1M x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
Synchronous Active 3-STATE 2003 SRAM Memory 0C~70C TA 1.8V 36Mb 490mA
***ponent Stockers USA
1M X 36 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 36MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA
***ponent Stockers USA
2M X 18 QDR SRAM 0.45 ns PBGA165
***or
IC SRAM 36MBIT PARALLEL 165FBGA
***ponent Stockers USA
1M X 36 DDR SRAM 0.45 ns PBGA165
***or
IC SRAM 36MBIT PARALLEL 165FBGA
***i-Key
IC SRAM DDRII 36MBIT 165BGA
***pmh
DDR SRAM, 1MX18, 0.45NS
***et
SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA
***ser
Memory - DDR SRAM, Synchronous 36Mb, 2Mbx18
***i-Key
IC SRAM 36MBIT PARALLEL 165LFBGA
***DA Technology Co., Ltd.
Product Description Demo for Development.
Quad SRAMs
GSI Technology Quad SRAMs combine capacity and performance with the ability to transfer 4 beats of data (2 beats per data bus) in a single clock cycle. SigmaQuad SRAMs are synchronous memories that have separate read and write data buses with transaction rates unequaled by any competitors.
Bild Teil # Beschreibung
GS8342DT11BGD-500

Mfr.#: GS8342DT11BGD-500

OMO.#: OMO-GS8342DT11BGD-500

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT11BGD-350I

Mfr.#: GS8342DT11BGD-350I

OMO.#: OMO-GS8342DT11BGD-350I

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT10BD-350I

Mfr.#: GS8342DT10BD-350I

OMO.#: OMO-GS8342DT10BD-350I

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT11BGD-550

Mfr.#: GS8342DT11BGD-550

OMO.#: OMO-GS8342DT11BGD-550

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT11BD-350

Mfr.#: GS8342DT11BD-350

OMO.#: OMO-GS8342DT11BD-350

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT10BD-300

Mfr.#: GS8342DT10BD-300

OMO.#: OMO-GS8342DT10BD-300

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT19BD-333

Mfr.#: GS8342DT19BD-333

OMO.#: OMO-GS8342DT19BD-333

SRAM 1.8 or 1.5V 2M x 18 36M
GS8342DT11BD-500

Mfr.#: GS8342DT11BD-500

OMO.#: OMO-GS8342DT11BD-500

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT11BD-550I

Mfr.#: GS8342DT11BD-550I

OMO.#: OMO-GS8342DT11BD-550I

SRAM 1.8 or 1.5V 4M x 9 36M
GS8342DT19BGD-333I

Mfr.#: GS8342DT19BGD-333I

OMO.#: OMO-GS8342DT19BGD-333I

SRAM 1.8 or 1.5V 2M x 18 36M
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von GS8342DT10BGD-350I dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
46,15 $
46,15 $
25
42,86 $
1 071,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • High-Temperature FASTON Housings
    TE Connectivity's FASTON terminals and connectors are a high quality, high temperature rated flag house that fully encloses the terminal.
  • 8462 Silicone Grease
    MG Chemicals' 8462 silicone grease is a water repelling, non-melting, and lubricating dielectric grease that provides superior corrosion and arcing resistance for connectors.
  • Compare GS8342DT10BGD-350I
    GS8342DT10BGD300 vs GS8342DT10BGD300I vs GS8342DT10BGD333
  • LGA 3647 Socket and Hardware
    TE Connectivity’s LGA 3647 socket and hardware meet the next-generation designs for Intel- and AMD-based LAG microprocessor packages for server, storage, data center, and high-performance computin
  • Super Duster™ 134 Aerosol Dusters
    MG Chemicals' Super Duster™ 134 non-flammable aerosol dusters remove microscopic dust, lint, and foreign particles from electro-mechanical instruments.
  • 15.0 mm High Power Terminal Block
    TE Connectivity AMP's high power terminal blocks are compact size, provide high current capacity, and are available in multiple positions.
Top