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IPB64N25S320ATMA1

IPB64N25S320ATMA1
Mfr. #:
IPB64N25S320ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 250V 64A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB64N25S320ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB64N25S320ATMA1 DatasheetIPB64N25S320ATMA1 Datasheet (P4-P6)IPB64N25S320ATMA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
64 A
Rds On - Drain-Source-Widerstand:
17.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
89 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
XPB64N25
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
45 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
IPB64N25S3-20 IPB64N25S32XT SP000876596
Gewichtseinheit:
0.068654 oz
Tags
IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
***p One Stop Japan
Trans MOSFET N-CH 250V 64A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
IPB64N25S3 Series 250 V 20 mOhm 64 A OptiMOS®-T Power-Transistor - PG-TO-263-3
***et Europe
Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R
***ical
Trans MOSFET 250V 64A Automotive
***i-Key
MOSFET N-CH 250V 64A TO263-3
***ronik
N-CH 250V 64A 20mOhm TO263-3
***ark
Mosfet, Aec-Q101, N-Ch, 250V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.0175Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, AEC-Q101, N-CH, 250V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, N-CH, 250V, TO-263; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:64A; Napięcie drenu / źródła Vds:250V; Rezystancja przewodzenia Rds(on):0.0175ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:300W; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:OptiMOS T Series; Kwalifikacja motoryzacyjna:AEC-Q101; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection
Teil # Mfg. Beschreibung Aktie Preis
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.7122
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB64N25S320ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.3900
  • 2000:$3.2900
  • 4000:$3.1900
  • 6000:$3.0900
  • 10000:$2.9900
IPB64N25S320ATMA1
DISTI # SP000876596		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000876596)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€3.0900
  • 2000:€2.9900
  • 4000:€2.9900
  • 6000:€2.7900
  • 10000:€2.6900
IPB64N25S320ATMA1
DISTI # 13AC9030		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 1:$6.3900
  • 10:$5.4300
  • 25:$5.1900
  • 50:$4.9500
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S3-20
DISTI # 726-IPB64N25S3-20		Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant		42
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S320ATMA1
DISTI # 726-IPB64N25S320ATMA		Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant		0
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S320ATMA1
DISTI # 1702295		Infineon Technologies AGMOSFET N-CH 250V 64A OPTIMOS-T D2PAK, RL1000
  • 1000:£2.3840
  • 2000:£2.3050
IPB64N25S320ATMA1
DISTI # 2725843		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant		0
  • 1:$12.2000
  • 10:$10.8900
  • 100:$8.9300
  • 500:$7.2300
IPB64N25S320ATMA1
DISTI # 2725843		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant		0
  • 1:£4.4800
  • 10:£4.0000
  • 100:£3.4200
  • 250:£3.2400
  • 500:£2.9900
Bild Teil # Beschreibung
DTC115ECAHZGT116

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IPB64N25S3-20

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OMO.#: OMO-IPB64N25S3-20

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OMO.#: OMO-TPS61099YFFT

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OMO.#: OMO-MP9486GN

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Mfr.#: VOR1142M4T

OMO.#: OMO-VOR1142M4T-VISHAY-SEMI-OPTO

 Relay SSR 50mA 1.5V DC-IN 0.27A 400V AC/DC-OUT Medical 4-Pin SOP T/R
DTC115ECAHZGT116

Mfr.#: DTC115ECAHZGT116

OMO.#: OMO-DTC115ECAHZGT116-ROHM-SEMI

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SIJ186DP-T1-GE3

Mfr.#: SIJ186DP-T1-GE3

OMO.#: OMO-SIJ186DP-T1-GE3-VISHAY

 N-Channel 60-V (D-S) MOSFET PowerPAK SO-8L 250M SG 2 mil , 4.5 m @ 10V 4.3 m @ 7.5V m @ 4.5V
Verfügbarkeit
Aktie:
900
Auf Bestellung:
2883
Menge eingeben:
Der aktuelle Preis von IPB64N25S320ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,38 $
6,38 $
10
5,42 $
54,20 $
100
4,70 $
470,00 $
250
4,46 $
1 115,00 $
500
4,00 $
2 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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