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IRF7779L2TR1PBF

IRF7779L2TR1PBF
Mfr. #:
IRF7779L2TR1PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 150V 67A 11mOhm 97nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7779L2TR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7779L2TR1PBF DatasheetIRF7779L2TR1PBF Datasheet (P4-P6)IRF7779L2TR1PBF Datasheet (P7-P9)IRF7779L2TR1PBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-L8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
67 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
97 nC
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.74 mm
Länge:
9.15 mm
Transistortyp:
1 N-Channel
Breite:
7.1 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
83 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
19 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001575282
Tags
IRF777, IRF77, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R
***Components
MOSFET N-Ch 150V 67A Direct-FET L8
***ment14 APAC
N CH MOSFET, 150V, 11A DIRECTFET L8
***ied Electronics & Automation
MOSFET; 150V, 67A, 11 MOHM, 97NC QG
***i-Key
MOSFET N-CH 150V 375A DIRECTFET
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N CH MOSFET, 150V, 11A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 150V, 67A, DIRECTFET L8; Transistor Polarity:N Channel; Current Id Max:67A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:125W; Operating Temperature Range:-55°C to +175°C; No. of Pins:5
Teil # Mfg. Beschreibung Aktie Preis
IRF7779L2TR1PBF
DISTI # IRF7779L2TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF7779L2TR1PBF
    DISTI # IRF7779L2TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF7779L2TR1PBF
      DISTI # IRF7779L2TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF7779L2TR1PBF
        DISTI # 70019645        		Infineon Technologies AGIRF7779L2TR1PBF N-channel MOSFET Transistor,375 A,150 V,11-Pin DirectFET L8
        RoHS: Compliant        		0
        • 1000:$3.4300
        IRF7779L2TR1PBF
        DISTI # 942-IRF7779L2TR1PBF        		Infineon Technologies AGMOSFET 150V 67A 11mOhm 97nC Qg
        RoHS: Compliant        		0
          IRF7779L2TR1PBF
          DISTI # 1791559          		Infineon Technologies AGMOSFET, N CH, 150V, 67A, DIRECTFET L8
          RoHS: Compliant          		0
          • 1:$9.7600
          • 10:$5.9600
          • 100:$5.6700
          • 250:$5.3600
          • 500:$5.1700
          • 1000:$5.0000
          • 2000:$4.7900
          • 5000:$4.6600
          Bild Teil # Beschreibung
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF

          		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF

          		 MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF.

          Mfr.#: IRF7779L2TRPBF.

          OMO.#: OMO-IRF7779L2TRPBF--1190

          		 Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2500
          Menge eingeben:
          Der aktuelle Preis von IRF7779L2TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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