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| PartNumber | IRF7779L2TRPBF | IRF7779L2TR1PBF | IRF7779L2TRPBF. |
| Description | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | MOSFET 150V 67A 11mOhm 97nC Qg | Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DirectFET-L8 | DirectFET-L8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
| Id Continuous Drain Current | 67 A | 67 A | - |
| Rds On Drain Source Resistance | 9 mOhms | 9 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 97 nC | 97 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DirectFET | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.74 mm | 0.74 mm | - |
| Length | 9.15 mm | 9.15 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 7.1 mm | 7.1 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19 ns | 19 ns | - |
| Factory Pack Quantity | 4000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 36 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | SP001572314 | SP001575282 | - |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Forward Transconductance Min | - | 83 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7779L2TRPBF | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | |
| IRF7779L2TR1PBF | MOSFET 150V 67A 11mOhm 97nC Qg | ||
| IRF7779L2TRPBF. | Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi | ||
Infineon Technologies |
IRF7779L2TR1PBF | IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg | |
| IRF7779L2TRPBF | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC |