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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIA431DJ-T1-GE3 DISTI # V72:2272_09216835 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 222 |
|
| SIA431DJ-T1-GE3 DISTI # V36:1790_09216835 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 0 |
|
| SIA431DJ-T1-GE3 DISTI # SIA431DJ-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 20V 12A PPAK SC70-6 Min Qty: 1 Container: Cut Tape (CT) | 5761In Stock |
|
| SIA431DJ-T1-GE3 DISTI # SIA431DJ-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 20V 12A PPAK SC70-6 Min Qty: 1 Container: Digi-Reel® | 5761In Stock |
|
| SIA431DJ-T1-GE3 DISTI # SIA431DJ-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 20V 12A PPAK SC70-6 Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
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| SIA431DJ-T1-GE3 DISTI # 34445433 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 3000 |
|
| SIA431DJ-T1-GE3 DISTI # 32014134 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 222 |
|
| SIA431DJ-T1-GE3 DISTI # SIA431DJ-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70 T/R (Alt: SIA431DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SIA431DJ-T1-GE3 DISTI # SIA431DJ-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA431DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIA431DJ-T1-GE3 DISTI # 35R0006 | Vishay Intertechnologies | P CHANNEL MOSFET, -20V, 12A,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):25mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs Typ:-850mV RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIA431DJ-T1-GE3 DISTI # 35R6184 | Vishay Intertechnologies | P CHANNEL MOSFET, -20V, 12A,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-850mV RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIA431DJ-T1-GE3 DISTI # 781-SIA431DJ-GE3 | Vishay Intertechnologies | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant | 4766 |
|
| SIA431DJ-T1-GE3 | Vishay Intertechnologies | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant | Americas - | |
| SIA431DJT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 9.6A I(D), 20V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 6000 | |
| SIA431DJ-T1-GE3 DISTI # XSFP00000077662 | Vishay Siliconix | Single P-Channel 20 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L RoHS: Compliant | 6000 in Stock0 on Order |
|
| SIA431DJ-T1-GE3 DISTI # XSKDRABV0051670 | Vishay Intertechnologies | RoHS: Compliant | 15000 in Stock0 on Order |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SIA413DJ-T1-GE3 OMO.#: OMO-SIA413DJ-T1-GE3 |
MOSFET 12V 12A 19W 29mohm @ 4.5V |
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Mfr.#: SIA440DJ-T1-GE3 OMO.#: OMO-SIA440DJ-T1-GE3 |
MOSFET 40V Vds 12V Vgs PowerPAK SC-70 |
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Mfr.#: SIA468DJ-T1-GE3 OMO.#: OMO-SIA468DJ-T1-GE3 |
MOSFET 30V Vds 20V Vgs PowerPAK SC-70 |
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Mfr.#: SIA408DJ-T1-GE3 OMO.#: OMO-SIA408DJ-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 |
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Mfr.#: SIA467EDJ-T1-GE3 OMO.#: OMO-SIA467EDJ-T1-GE3-VISHAY |
MOSFET P-CH 12V 31A SC70-6 |
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Mfr.#: SIA421DJ-T1-GE3 OMO.#: OMO-SIA421DJ-T1-GE3-VISHAY |
MOSFET P-CH 30V 12A SC70-6 |
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Mfr.#: SIA427DJ OMO.#: OMO-SIA427DJ-1190 |
Neu und Original |
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Mfr.#: SIA433EDJT1GE3 OMO.#: OMO-SIA433EDJT1GE3-1190 |
Neu und Original |
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Mfr.#: SIA462DJ-T4-GE3 OMO.#: OMO-SIA462DJ-T4-GE3-VISHAY |
MOSFET N-CH 30V SMD |
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Mfr.#: SIA443DJ-T1-E3 OMO.#: OMO-SIA443DJ-T1-E3-VISHAY |
MOSFET P-CH 20V 9A SC70-6 |