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SISH108DN-T1-GE3

SISH108DN-T1-GE3
Mfr. #:
SISH108DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CHAN 20 V POWERPAK 1212
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISH108DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISH108DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SISH10, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISH108DN-T1-GE3
DISTI # V99:2348_22831165		Vishay IntertechnologiesSISH108DN-T1-GE36000
  • 3000:$0.2024
  • 1000:$0.2249
  • 500:$0.2869
  • 100:$0.3855
  • 10:$0.5574
  • 1:$0.6578
SISH108DN-T1-GE3
DISTI # SISH108DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6050In Stock
  • 1000:$0.2046
  • 500:$0.2648
  • 100:$0.3370
  • 10:$0.4510
  • 1:$0.5300
SISH108DN-T1-GE3
DISTI # SISH108DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6050In Stock
  • 1000:$0.2046
  • 500:$0.2648
  • 100:$0.3370
  • 10:$0.4510
  • 1:$0.5300
SISH108DN-T1-GE3
DISTI # SISH108DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 30000:$0.1558
  • 15000:$0.1578
  • 6000:$0.1695
  • 3000:$0.1811
SISH108DN-T1-GE3
DISTI # 33140901		Vishay IntertechnologiesSISH108DN-T1-GE36000
  • 24000:$0.1480
  • 9000:$0.1639
  • 6000:$0.1821
  • 3000:$0.2024
  • 1000:$0.2249
  • 500:$0.2869
  • 100:$0.3855
  • 45:$0.5574
SISH108DN-T1-GE3
DISTI # 99AC9580		Vishay IntertechnologiesMOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes50
  • 1000:$0.2910
  • 500:$0.3640
  • 250:$0.4020
  • 100:$0.4400
  • 50:$0.4870
  • 25:$0.5340
  • 10:$0.5810
  • 1:$0.7170
SISH108DN-T1-GE3
DISTI # 78-SISH108DN-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds,20/-16V Vgs PowerPAK 1212-8SH
RoHS: Compliant		5890
  • 1:$0.7100
  • 10:$0.5740
  • 100:$0.4350
  • 500:$0.3600
  • 1000:$0.2880
  • 3000:$0.2600
  • 6000:$0.2430
  • 9000:$0.2340
  • 24000:$0.2250
SISH108DN-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds,20/-16V Vgs PowerPAK 1212-8SHAmericas -
    SISH108DN-T1-GE3
    DISTI # 3019126    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W
    RoHS: Compliant    		50
    • 5000:$0.4620
    • 1000:$0.4860
    • 500:$0.6190
    • 250:$0.6920
    • 100:$0.7600
    • 25:$1.0300
    • 5:$1.1200
    SISH108DN-T1-GE3
    DISTI # 3019126    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W50
    • 500:£0.2120
    • 250:£0.2490
    • 100:£0.2860
    • 25:£0.3970
    • 5:£0.4260
    Bild Teil # Beschreibung
    SISH108DN-T1-GE3

    Mfr.#: SISH108DN-T1-GE3

    OMO.#: OMO-SISH108DN-T1-GE3

    		 MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
    SISH108DN-T1-GE3

    Mfr.#: SISH108DN-T1-GE3

    OMO.#: OMO-SISH108DN-T1-GE3-VISHAY

    		 MOSFET N-CHAN 20 V POWERPAK 1212
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SISH108DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,22 $
    0,22 $
    10
    0,21 $
    2,11 $
    100
    0,20 $
    19,98 $
    500
    0,19 $
    94,35 $
    1000
    0,18 $
    177,60 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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