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IPDH4N03LAG

IPDH4N03LAG
Mfr. #:
IPDH4N03LAG
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 25V 90A TO252-3-11
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPDH4N03LAG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPDH4N03LAG DatasheetIPDH4N03LAG Datasheet (P4-P6)IPDH4N03LAG Datasheet (P7-P9)IPDH4N03LAG Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPDH4, IPDH, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
90 A 25 V 0.0042 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***Yang
Trans MOSFET N-CH 25V 90A 3-Pin TO-252 - Bulk
***i-Key
PFET, 90A I(D), 25V, 0.0042OHM,
*** Electronic Components
MOSFET N-CH 25V 90A TO252-3-11
***emi
Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK
***r Electronics
Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-DPAK ;RoHS Compliant: Yes
***ark
N CH MOSFET, 20V, 100A, 3-DPAK; Transistor Polarity:N Channel; Continuous Drain
***(Formerly Allied Electronics)
IRLR6225PBF N-channel MOSFET Transistor; 100 A; 20 V; 3-Pin DPAK
***ure Electronics
Single N-Channel 20 V 4 mOhm 48 nC HEXFET® Power Mosfet - SOT-23
***el Electronic
Inductor RF Chip Wirewound 2.4nH 0.2nH 100MHz 20Q-Factor 850mA 50mOhm DCR 0402 Paper T/R
*** Source Electronics
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 20V 100A DPAK
***ineon SCT
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***roFlash
Power Field-Effect Transistor, 42A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; Logic Level
***ment14 APAC
N CH MOSFET, 20V, 100A, 3-DPAK; Transist; N CH MOSFET, 20V, 100A, 3-DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):3.2mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; No. of Pins:3
***ponent Stockers USA
90 A 25 V 0.0051 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***i-Key
MOSFET N-CH 25V 90A TO252-3
***el Nordic
Contact for details
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***emi
Power MOSFET 25 V, 124 A, Single N-Channel
***r Electronics
Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 15.7A/128A DPAK
Teil # Mfg. Beschreibung Aktie Preis
IPDH4N03LAG
DISTI # IPDH4N03LAGINCT-ND		Infineon Technologies AGMOSFET N-CH 25V 90A TO252-3-11
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2425In Stock
  • 1000:$0.8738
  • 500:$0.8984
  • 100:$0.9661
  • 10:$1.1450
  • 1:$1.4500
IPDH4N03LAG
DISTI # IPDH4N03LAGINTR-ND		Infineon Technologies AGMOSFET N-CH 25V 90A TO252-3-11
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPDH4N03LAG
    DISTI # IPDH4N03LAG    		Infineon Technologies AGTrans MOSFET N-CH 25V 90A 3-Pin TO-252 - Bulk (Alt: IPDH4N03LAG)
    RoHS: Not Compliant
    Min Qty: 556
    Container: Bulk    		Americas - 0
    • 5560:$0.5709
    • 2780:$0.5819
    • 1668:$0.6019
    • 1112:$0.6249
    • 556:$0.6479
    IPDH4N03LA G
    DISTI # 726-IPDH4N03LAG    		Infineon Technologies AGMOSFET N-Ch 25V 90A DPAK-2
    RoHS: Compliant    		0
      IPDH4N03LAGInfineon Technologies AGPower Field-Effect Transistor, 90A I(D), 25V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		4380
      • 1000:$0.5900
      • 500:$0.6200
      • 100:$0.6500
      • 25:$0.6800
      • 1:$0.7300
      Bild Teil # Beschreibung
      IPDH4N03LA

      Mfr.#: IPDH4N03LA

      OMO.#: OMO-IPDH4N03LA-1190

      		 Neu und Original
      IPDH4N03LA G

      Mfr.#: IPDH4N03LA G

      OMO.#: OMO-IPDH4N03LA-G-1190

      		 MOSFET N-Ch 25V 90A DPAK-2
      IPDH4N03LAG

      Mfr.#: IPDH4N03LAG

      OMO.#: OMO-IPDH4N03LAG-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 90A TO252-3-11
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von IPDH4N03LAG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
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      0,00 $
      10
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      0,00 $
      100
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      500
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      1000
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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