FQA28N15

Mfr. #:: FQA28N15
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: MOSFET 150V N-Channel QFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FQA28N15 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-3PN-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 150 V

Id - Kontinuierlicher Drainstrom:: 33 A

Rds On - Drain-Source-Widerstand:: 90 mOhms

Vgs - Gate-Source-Spannung:: 25 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 277 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: QFET

Verpackung:: Rohr

Höhe:: 20.1 mm

Länge:: 16.2 mm

Serie:: FQA28N15

Transistortyp:: 1 N-Channel

Typ:: MOSFET

Breite:: 5 mm

Marke:: ON Semiconductor / Fairchild

Vorwärtstranskonduktanz - Min:: 20 S

Abfallzeit:: 115 ns

Produktart:: MOSFET

Anstiegszeit:: 180 ns

Werkspackungsmenge:: 450

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 100 ns

Typische Einschaltverzögerungszeit:: 17 ns

Teil # Aliase:: FQA28N15_NL

Gewichtseinheit:: 0.225789 oz

Tags: FQA28N15, FQA28N1, FQA28, FQA2, FQA

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQA28N15 Beschreibung

***emi: N-Channel Power MOSFET, QFET®, 150V, 33A, 90mΩ, TO-3P

***nell: MOSFET, N CH, 150V, 33A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ure Electronics: Single N-Channel 150 V 0.146 Ohm 34 nC 135 W Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ

***ter Electronics: TO-220AB, SINGLE, N-CH, 150V, 57MOHM ULTRAFET TRENCH MOSFET

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH 29A 150V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:29A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRFB4615PBF N-channel MOSFET Transistor, 35 A, 150 V, 3-Pin TO-220AB

*** Source Electronics: Trans MOSFET N-CH 150V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 35A TO-220AB

***ure Electronics: Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.032Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***ineon SCT: 150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 150V 150A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 144 W

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull

***nell: MOSFET DIG AUDIO CLASS D 150V TO220AB; Transistor Polarity:N Channel; On State Resistance:39mohm; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; Case Style:TO-220AB; Cont Current Id:21A; Max Voltage Vgs th:20V; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:150V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 150 V 0.045 Ohm 72 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ment14 APAC: MOSFET, N, 150V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:41A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:164A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

***emi: 150 V, 37 A, 50 mOhm Single N-Channel Power MOSFET, TO-220

***Yang: Trans MOSFET N-CH 150V 37A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***ment14 APAC: N CHANNEL MOSFET, 150V, 37A, TO-220; Tra

***r Electronics: Power Field-Effect Transistor, 37A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:37A; On Resistance, Rds(on):50mohm; Package/Case:3-TO-220; Power Dissipation, Pd:178W; Drain-Source Breakdown Voltage:150V ;RoHS Compliant: Yes

***i-Key: MOSFET N-CH 150V 25.6A TO-220F

***el Electronic: IC SUPERVISOR 1 CHANNEL 5SSOP

***ser: MOSFETs 150V N-Channel QFET

***el Nordic: Contact for details

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FQA28N15 DISTI # V36:1790_06301210	ON Semiconductor	QF 150V 90MOHM TO3PN	920	10000:$0.6957 5000:$0.7195 2500:$0.7433 1000:$0.7640 500:$0.9037 100:$1.0261 10:$1.2200 1:$1.3820
FQA28N15 DISTI # V99:2348_06301210	ON Semiconductor	QF 150V 90MOHM TO3PN	869	10000:$0.6957 5000:$0.7195 2500:$0.7433 1000:$0.7640 500:$0.9037 100:$1.0261 10:$1.2200 1:$1.3820
FQA28N15 DISTI # FQA28N15-ND	ON Semiconductor	MOSFET N-CH 150V 33A TO-3P RoHS: Compliant Min Qty: 1 Container: Tube	813In Stock	1350:$0.9219 900:$1.0046 450:$1.2716 10:$1.7800 1:$1.9700
FQA28N15_F109 DISTI # FQA28N15_F109-ND	ON Semiconductor	MOSFET N-CH 150V 33A TO-3P RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
FQA28N15 DISTI # 30297270	ON Semiconductor	QF 150V 90MOHM TO3PN	869	500:$0.9037 100:$1.0262 10:$1.2201 9:$1.3822
FQA28N15 DISTI # 30618165	ON Semiconductor	QF 150V 90MOHM TO3PN	410	250:$1.2062 100:$1.3642 50:$1.6065 10:$1.9763 7:$3.8632
FQA28N15 DISTI # FQA28N15	ON Semiconductor	Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FQA28N15) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 568	1:$1.9280 10:$1.6420 100:$1.3160 500:$1.1300 1000:$0.8540 2500:$0.8300 5000:$0.8080
FQA28N15 DISTI # 58K8866	ON Semiconductor	Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-3P Rail - Bulk (Alt: 58K8866) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$1.9500 10:$1.6700 100:$1.3500 500:$1.1900 1000:$0.9900 2500:$0.9260 5000:$0.8930
FQA28N15 DISTI # 58K8866	ON Semiconductor	N CHANNEL MOSFET, 150V, 33A, TO-3P,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes	1773	1:$1.9500 10:$1.6700 100:$1.3500 500:$1.1900 1000:$0.9900 2500:$0.9260 5000:$0.8930
FQA28N15 DISTI # 87X8791	ON Semiconductor	MOSFET Transistor, N Channel, 33 A, 150 V, 0.067 ohm, 10 V, 4 V , RoHS Compliant: Yes	14824	1:$1.8000 10:$1.5400 100:$1.2500 500:$1.1000 1000:$0.9160 2500:$0.8580 5000:$0.8270
FQA28N15 DISTI # 512-FQA28N15	ON Semiconductor	MOSFET 150V N-Channel QFET RoHS: Compliant	2453	1:$1.7100 10:$1.4500 100:$1.1600 500:$1.0200 1000:$0.8390 2500:$0.7810 5000:$0.7520 10000:$0.7230
FQA28N15_F109 DISTI # 512-FQA28N15_F109	ON Semiconductor	MOSFET 150V N-Channel RoHS: Compliant	0
FQA28N15 DISTI # 8088985	ON Semiconductor	MOSFETFAIRCHILDFQA28N15, PK	595	5:£1.4200 25:£1.2060 50:£1.0880 250:£0.9700 500:£0.8480
FQA28N15 DISTI # 2101410	ON Semiconductor	MOSFET, N CH, 150V, 33A, TO-3PN RoHS: Compliant	14824	1:$3.0000 10:$2.5600 100:$2.0400 500:$1.7900 1000:$1.4700 2500:$1.3800 5000:$1.3300 10000:$1.2800
FQA28N15 DISTI # C1S541901402413	ON Semiconductor	MOSFETs RoHS: Not Compliant	20	10:$1.2200
FQA28N15 DISTI # C1S541901648990	ON Semiconductor	MOSFETs RoHS: Not Compliant	869	500:$0.9037 100:$1.0261 10:$1.2200
FQA28N15 DISTI # C1S541901615859	ON Semiconductor	MOSFETs RoHS: Not Compliant	410	250:$0.9460 50:$1.2600 1:$3.0300
FQA28N15 DISTI # 2101410	ON Semiconductor	MOSFET, N CH, 150V, 33A, TO-3PN RoHS: Compliant	15519	5:£1.3500 25:£1.2400 100:£0.9950 250:£0.9290 500:£0.8620

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	Mfr.#: LMR23630AFDDAR OMO.#: OMO-LMR23630AFDDAR	Switching Voltage Regulators 36V, 3A, 400kHz Synchronous Regulator
	Mfr.#: TIP140G OMO.#: OMO-TIP140G-ON-SEMICONDUCTOR	Darlington Transistors 10A 60V Bipolar Power NPN
	Mfr.#: FQA36P15 OMO.#: OMO-FQA36P15-ON-SEMICONDUCTOR	MOSFET P-CH 150V 36A TO-3P
	Mfr.#: LM358N OMO.#: OMO-LM358N-STMICROELECTRONICS	IC OPAMP GP 8DIP
	Mfr.#: 516D476M100MN6AE3 OMO.#: OMO-516D476M100MN6AE3-1130	Aluminum Electrolytic Capacitors - Leaded 47uF 100volts 20%
	Mfr.#: HUF75344G3 OMO.#: OMO-HUF75344G3-ON-SEMICONDUCTOR	MOSFET N-CH 55V 75A TO-247

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von FQA28N15 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,71 $~~; ~~1,71 $~~

10: ~~1,45 $~~; ~~14,50 $~~

100: ~~1,16 $~~; ~~116,00 $~~

500: ~~1,02 $~~; ~~510,00 $~~

1000: ~~0,84 $~~; ~~839,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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FQA28N15

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes