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BFP 640ESD H6327

BFP 640ESD H6327
Mfr. #:
BFP 640ESD H6327
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors RF BIP TRANSISTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BFP 640ESD H6327 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BFP 640ESD H6327 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
HF-Transistoren (BJT)
Serie
BFP640
Verpackung
Spule
Teil-Aliasnamen
BFP640ESDH6327XT BFP640ESDH6327XTSA1 SP000785482
Montageart
SMD/SMT
Paket-Koffer
SOT-343
Technologie
SiGe
Aufbau
Single Dual Emitter
Transistor-Typ
Bipolar
Pd-Verlustleistung
200 mW
Arbeitsfrequenz
45 GHz
Kollektor-Emitter-Spannung-VCEO-Max
4.1 V
Transistor-Polarität
NPN
Kontinuierlicher Kollektorstrom
50 mA
DC-Kollektor-Basis-Gain-hfe-Min
110
Tags
BFP640ESDH, BFP640ES, BFP640E, BFP64, BFP6, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
BFP640ESDH6327XTSA1
DISTI # 32748676		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		6000
  • 3000:$0.2203
BFP640ESDH6327XTSA1
DISTI # 32868515		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		3000
  • 3000:$0.2293
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1CT-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1711In Stock
  • 1000:$0.2297
  • 500:$0.2973
  • 100:$0.3784
  • 10:$0.5070
  • 1:$0.5900
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1DKR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1711In Stock
  • 1000:$0.2297
  • 500:$0.2973
  • 100:$0.3784
  • 10:$0.5070
  • 1:$0.5900
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1679
  • 15000:$0.1771
  • 6000:$0.1902
  • 3000:$0.2034
BFP640ESDH6327XTSA1
DISTI # V36:1790_06384746		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		0
    BFP640ESDH6327XTSA1
    DISTI # V72:2272_06384746    		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
    RoHS: Compliant    		0
      BFP640ESDH6327
      DISTI # BFP 640ESD H6327      		Infineon Technologies AGRF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343 (Alt: BFP 640ESD H6327)
      RoHS: Compliant
      Min Qty: 3000      		Asia - 0
      • 150000:$0.1661
      • 75000:$0.1682
      • 30000:$0.1704
      • 15000:$0.1726
      • 9000:$0.1773
      • 6000:$0.1822
      • 3000:$0.1874
      BFP640ESDH6327XTSA1
      DISTI # BFP640ESDH6327XTSA1      		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Bulk (Alt: BFP640ESDH6327XTSA1)
      Min Qty: 1924
      Container: Bulk      		Americas - 0
      • 19240:$0.1649
      • 9620:$0.1679
      • 5772:$0.1739
      • 3848:$0.1799
      • 1924:$0.1869
      BFP640ESDH6327XTSA1
      DISTI # BFP640ESDH6327XTSA1      		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP640ESDH6327XTSA1)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.1659
      • 18000:$0.1689
      • 12000:$0.1749
      • 6000:$0.1819
      • 3000:$0.1889
      BFP640ESDH6327XTSA1
      DISTI # SP000785482      		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R (Alt: SP000785482)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.1729
      • 18000:€0.1869
      • 12000:€0.2019
      • 6000:€0.2209
      • 3000:€0.2699
      BFP640ESDH6327XTSA1
      DISTI # 01AC4780      		Infineon Technologies AGRF BIP TRANSISTORS,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.7V,Transition Frequency ft:45GHz,Power Dissipation Pd:160mW,DC Collector Current:45mA,DC Current Gain hFE:250hFE,RF Transistor Case:TSFP,No. of RoHS Compliant: Yes0
      • 1000:$0.2260
      • 500:$0.2480
      • 250:$0.2700
      • 100:$0.2920
      • 50:$0.3540
      • 25:$0.4160
      • 10:$0.4790
      • 1:$0.5760
      BFP640ESDH6327XTSA1Infineon Technologies AGBFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor
      RoHS: Compliant      		6000Reel
      • 3000:$0.1640
      BFP 640ESD H6327
      DISTI # 726-BFP640ESDH6327XT      		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
      RoHS: Compliant      		3667
      • 1:$0.5700
      • 10:$0.4740
      • 100:$0.2890
      • 1000:$0.2240
      • 3000:$0.1910
      BFP640ESDH6327XTSA1
      DISTI # 726-BFP640ESDH6327      		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
      RoHS: Compliant      		5445
      • 1:$0.5700
      • 10:$0.4740
      • 100:$0.2890
      • 1000:$0.2240
      • 3000:$0.1910
      BFP640ESDH6327XTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN
      RoHS: Compliant      		345
      • 1000:$0.1700
      • 500:$0.1800
      • 100:$0.1900
      • 25:$0.2000
      • 1:$0.2100
      BFP 640ESD H6327Infineon Technologies AG 848
        BFP640ESDH6327XTSA1
        DISTI # 8275154P        		Infineon Technologies AGLOW NOISE SIGE RF TRANSISTOR NPN SOT343, RL1400
        • 1250:£0.2360
        • 500:£0.2720
        • 125:£0.3090
        BFP640ESDH6327XTSA1
        DISTI # 8275154        		Infineon Technologies AGLOW NOISE SIGE RF TRANSISTOR NPN SOT343, PK250
        • 1250:£0.2360
        • 500:£0.2720
        • 125:£0.3090
        • 25:£0.3640
        BFP640ESDH6327Infineon Technologies AG 2520
          BFP640ESDH6327XTSA1
          DISTI # 2443521          		Infineon Technologies AGRF BIP TRANSISTORS
          RoHS: Compliant          		1366
          • 10:$0.7290
          • 1:$0.8770
          BFP640ESDH6327XTSA1
          DISTI # 2443521          		Infineon Technologies AGRF BIP TRANSISTORS1386
          • 500:£0.2690
          • 250:£0.2940
          • 100:£0.3200
          • 25:£0.3460
          • 5:£0.4100
          BFP640ESDH6327XTSA1
          DISTI # XSFP00000114571          		Infineon Technologies AG 
          RoHS: Compliant          		6000 in Stock0 on Order
          • 6000:$0.2982
          • 3000:$0.3280
          BFP640ESD H6327
          DISTI # THF5293          		Infineon Technologies AGNPN RF-Trans 4,1V 50mASOT343
          RoHS: Compliant          		Stock DE - 0Stock HK - 0Stock US - 0
          • 3000:$0.4322
          • 6000:$0.4020
          • 9000:$0.3825
          • 15000:$0.3458
          • 21000:$0.3177
          BFP640ESDH6327Infineon Technologies AG4.1V,50mA,Bipolar RF NPN Transistor2400
          • 1:$0.3100
          • 100:$0.2600
          • 500:$0.2300
          • 1000:$0.2200
          Bild Teil # Beschreibung
          BFP 640ESD H6327

          Mfr.#: BFP 640ESD H6327

          OMO.#: OMO-BFP-640ESD-H6327

          		 RF Bipolar Transistors RF BIP TRANSISTORS
          BFP 640ESD H6327

          Mfr.#: BFP 640ESD H6327

          OMO.#: OMO-BFP-640ESD-H6327-317

          		 RF Bipolar Transistors RF BIP TRANSISTORS
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von BFP 640ESD H6327 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,29 $
          0,29 $
          10
          0,27 $
          2,72 $
          100
          0,26 $
          25,79 $
          500
          0,24 $
          121,75 $
          1000
          0,23 $
          229,20 $
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