 |  |  | |
| PartNumber | BFP640ESDH6327XTSA1 | BFP 640ESD H6327 | BFP640ESDH6327S |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | RF Bipolar Transistors RF BIP TRANSISTORS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | Y | Y | - |
| Series | BFP640 | BFP640 | - |
| Technology | Si | SiGe | - |
| Package / Case | SOT-343-4 | SOT-343 | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 640ESD BFP BFP64ESDH6327XT H6327 SP000785482 | BFP640ESDH6327XTSA1 BFP64ESDH6327XT SP000785482 | - |
| Transistor Type | - | Bipolar | - |
| Transistor Polarity | - | NPN | - |
| DC Collector/Base Gain hfe Min | - | 110 | - |
| Collector Emitter Voltage VCEO Max | - | 4.1 V | - |
| Continuous Collector Current | - | 50 mA | - |
| Configuration | - | Single | - |
| Mounting Style | - | SMD/SMT | - |
| Operating Frequency | - | 45 GHz | - |
| Type | - | RF Silicon Germanium | - |
| Pd Power Dissipation | - | 200 mW | - |
| Unit Weight | - | 0.000244 oz | - |