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BFP640ESDH6327XTSA1

BFP640ESDH6327XTSA1
Mfr. #:
BFP640ESDH6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors RF BIP TRANSISTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BFP640ESDH6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
HF-Bipolartransistoren
RoHS:
Y
Serie:
BFP640
Technologie:
Si
Paket / Koffer:
SOT-343-4
Verpackung:
Spule
Marke:
Infineon-Technologien
Produktart:
HF-Bipolartransistoren
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Teil # Aliase:
640ESD BFP BFP64ESDH6327XT H6327 SP000785482
Tags
BFP640ESDH, BFP640ES, BFP640E, BFP64, BFP6, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin(3+Tab) SOT-343 T/R
***ure Electronics
BFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor
***ineon SCT
The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads, SOT343, RoHS
***ineon
The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V. | Summary of Features: Robust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology; 2 kV ESD robustness (HBM) due to integrated protection circuits; High maximum RF input power of 21 dBm; 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA; 26.5 dB maximum gain Gms typical at 1.5 GHz, 23 dB at 2.4 GHz, 30 mA; 27 dBm OIP3 typical at 2.4 GHz, 30 mA; Accurate SPICE GP model available to enable effective design in process (see chapter 6); Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
Teil # Mfg. Beschreibung Aktie Preis
BFP640ESDH6327XTSA1
DISTI # V72:2272_06384746		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		4202
  • 3000:$0.1631
  • 1000:$0.1979
  • 500:$0.2491
  • 250:$0.2544
  • 100:$0.2551
  • 25:$0.3649
  • 10:$0.3716
  • 1:$0.4293
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1CT-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4371In Stock
  • 1000:$0.2297
  • 500:$0.2973
  • 100:$0.3784
  • 10:$0.5070
  • 1:$0.5900
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1DKR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4371In Stock
  • 1000:$0.2297
  • 500:$0.2973
  • 100:$0.3784
  • 10:$0.5070
  • 1:$0.5900
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1679
  • 15000:$0.1771
  • 6000:$0.1902
  • 3000:$0.2034
BFP640ESDH6327XTSA1
DISTI # 30986123		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		18000
  • 3000:$0.2533
BFP640ESDH6327XTSA1
DISTI # 26195568		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		4202
  • 3000:$0.1624
  • 1000:$0.1979
  • 500:$0.2491
  • 250:$0.2543
  • 100:$0.2551
  • 39:$0.3639
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP640ESDH6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1889
  • 6000:$0.1819
  • 12000:$0.1749
  • 18000:$0.1689
  • 30000:$0.1659
BFP640ESDH6327XTSA1
DISTI # 01AC4780		Infineon Technologies AGRF BIP TRANSISTORS,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.7V,Transition Frequency ft:45GHz,Power Dissipation Pd:160mW,DC Collector Current:45mA,DC Current Gain hFE:250hFE,RF Transistor Case:TSFP,No. of RoHS Compliant: Yes1583
  • 1:$0.5800
  • 10:$0.4740
  • 25:$0.4120
  • 50:$0.3510
  • 100:$0.2890
  • 250:$0.2670
  • 500:$0.2460
  • 1000:$0.2240
BFP640ESDH6327XTSA1
DISTI # 726-BFP640ESDH6327		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
RoHS: Compliant		5673
  • 1:$0.5800
  • 10:$0.4740
  • 100:$0.2890
  • 1000:$0.2240
  • 3000:$0.1910
BFP 640ESD H6327
DISTI # 726-BFP640ESDH6327XT		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
RoHS: Compliant		1815
  • 1:$0.5800
  • 10:$0.4740
  • 100:$0.2890
  • 1000:$0.2240
  • 3000:$0.1910
BFP640ESDH6327XTSA1Infineon Technologies AGBFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor
RoHS: Compliant		27000Reel
  • 3000:$0.1810
BFP640ESDH6327XTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN
RoHS: Compliant		345
  • 1000:$0.1700
  • 500:$0.1800
  • 100:$0.1900
  • 25:$0.2000
  • 1:$0.2100
BFP640ESDH6327XTSA1
DISTI # 8275154		Infineon Technologies AGLOW NOISE SIGE RF TRANSISTOR NPN SOT343, PK175
  • 25:£0.1600
  • 125:£0.1560
BFP640ESDH6327XTSA1
DISTI # 8275154P		Infineon Technologies AGLOW NOISE SIGE RF TRANSISTOR NPN SOT343, RL1925
  • 125:£0.1560
BFP640ESDH6327XTSA1
DISTI # 2443521		Infineon Technologies AGRF BIP TRANSISTORS
RoHS: Compliant		1583
  • 1:$0.9180
  • 10:$0.7500
  • 100:$0.4580
  • 1000:$0.3550
  • 3000:$0.3030
  • 9000:$0.2950
BFP640ESDH6327XTSA1
DISTI # C1S322000559949		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		4202
  • 250:$0.2543
  • 100:$0.2551
  • 25:$0.3639
  • 10:$0.3716
BFP640ESDH6327XTSA1
DISTI # 2443521		Infineon Technologies AGRF BIP TRANSISTORS
RoHS: Compliant		1608
  • 5:£0.4100
  • 25:£0.2410
  • 100:£0.2400
  • 250:£0.2390
  • 500:£0.2380
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von BFP640ESDH6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,57 $
0,57 $
10
0,47 $
4,74 $
100
0,29 $
28,90 $
1000
0,22 $
224,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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