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FFSH20120A

FFSH20120A
Mfr. #:
FFSH20120A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Schottky Diodes & Rectifiers Silicon Carbide Schottky Diode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FFSH20120A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FFSH20120A Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-2
Wenn - Vorwärtsstrom:
20 A
Vrrm - Repetitive Sperrspannung:
1200 V
Vf - Durchlassspannung:
1.45 V
Ifsm - Vorwärtsstoßstrom:
135 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
200 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FFSH20120A
Verpackung:
Rohr
Marke:
ON Semiconductor / Fairchild
Pd - Verlustleistung:
273 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
450
Unterkategorie:
Dioden & Gleichrichter
Vr - Sperrspannung:
1200 V
Gewichtseinheit:
0.223284 oz
Tags
FFSH201, FFSH2, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon Carbide, TO-247AB
***ical
Rectifier Diode Schottky SiC 1.2KV 30A 2-Pin(2+Tab) TO-247 Tube
***rchild Semiconductor
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased powerdensity, reduced EMI, and reduced system size and cost.
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
FFSH20120A-F085
DISTI # V99:2348_21657264		ON SemiconductorSilicon Carbide Schottky Diode440
  • 500:$13.3800
  • 250:$14.3000
  • 100:$14.5900
  • 25:$16.7100
  • 10:$17.6000
  • 1:$19.3200
FFSH20120ADN-F085
DISTI # V99:2348_21657265		ON SemiconductorSilicon Carbide Schottky Diode440
  • 100:$11.9050
  • 25:$12.4759
  • 10:$13.2210
  • 1:$13.9920
FFSH20120ADN-F155
DISTI # V99:2348_16116317		ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 25:$9.5750
  • 10:$10.4610
  • 1:$10.6510
FFSH20120A
DISTI # V36:1790_18470536		ON SemiconductorSilicon Carbide Schottky Diode0
  • 450000:$6.2170
  • 225000:$6.2240
  • 45000:$7.4660
  • 4500:$10.2600
  • 450:$10.7600
FFSH20120A-F085
DISTI # V36:1790_21657264		ON SemiconductorSilicon Carbide Schottky Diode0
  • 450000:$10.7600
  • 225000:$10.7700
  • 45000:$12.5500
  • 4500:$16.7200
  • 450:$17.4900
FFSH20120ADN-F085
DISTI # V36:1790_21657265		ON SemiconductorSilicon Carbide Schottky Diode0
  • 450000:$7.4010
  • 225000:$7.4060
  • 45000:$8.1410
  • 4500:$9.6700
  • 450:$9.9390
FFSH20120A-F085
DISTI # FFSH20120A-F085OS-ND		ON Semiconductor1200V 20A AUTO SIC SBD
RoHS: Not compliant
Min Qty: 1
Container: Tube		449In Stock
  • 450:$15.0381
  • 25:$17.9488
  • 10:$18.7250
  • 1:$20.3700
FFSH20120A
DISTI # FFSH20120A-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV 30A TO247-2
RoHS: Not compliant
Min Qty: 1
Container: Tube		334In Stock
  • 900:$8.1254
  • 450:$8.9118
  • 25:$10.7464
  • 10:$11.2710
  • 1:$12.4800
FFSH20120ADN-F155
DISTI # FFSH20120ADN-F155-ND		ON SemiconductorDIODE SIC 1200V 10A TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$8.1014
FFSH20120ADN-F085
DISTI # FFSH20120ADN-F085-ND		ON Semiconductor1200V 20A AUTO SIC SBD
RoHS: Not compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$9.9386
FFSH20120A
DISTI # 26712907		ON SemiconductorSilicon Carbide Schottky Diode104850
  • 450:$10.7600
FFSH20120ADN-F155
DISTI # 29495569		ON SemiconductorSIC TO247 SBD 20A 1200V11250
  • 450:$9.2217
FFSH20120A-F085
DISTI # 31234725		ON SemiconductorSilicon Carbide Schottky Diode1350
  • 450:$17.4900
FFSH20120A-F085
DISTI # 29729158		ON SemiconductorSilicon Carbide Schottky Diode440
  • 1:$19.3200
FFSH20120ADN-F085
DISTI # 30346050		ON SemiconductorSilicon Carbide Schottky Diode440
  • 1:$13.9920
FFSH20120ADN-F155
DISTI # 25944270		ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 1:$10.6510
FFSH20120A
DISTI # FFSH20120A		ON SemiconductorDiode Schottky 1200V 20A 2-Pin TO-247 Tube - Rail/Tube (Alt: FFSH20120A)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$6.2900
  • 2700:$6.3900
  • 1800:$6.4900
  • 900:$6.5900
  • 450:$6.6900
FFSH20120A
DISTI # FFSH20120A		ON SemiconductorDiode Schottky 1200V 20A 2-Pin TO-247 Tube (Alt: FFSH20120A)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 500:€6.4900
  • 1000:€6.4900
  • 100:€6.6900
  • 50:€6.8900
  • 25:€7.1900
  • 10:€7.4900
  • 1:€9.1900
FFSH20120A-F085
DISTI # FFSH20120A-F085		ON Semiconductor1200V 20AAUTO SIC SBD - Rail/Tube (Alt: FFSH20120A-F085)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$11.3900
  • 2700:$11.5900
  • 1800:$11.7900
  • 450:$11.9900
  • 900:$11.9900
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155		ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$6.3900
  • 2700:$6.5900
  • 900:$6.6900
  • 1800:$6.6900
  • 450:$6.7900
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155		ON Semiconductor1200V SiC SBD 20A (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€6.0900
  • 500:€6.5900
  • 100:€6.7900
  • 50:€7.0900
  • 25:€7.3900
  • 10:€7.6900
  • 1:€8.3900
FFSH20120ADN_F155
DISTI # FFSH20120ADN_F155		ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN_F155)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
    FFSH20120ADN_F155
    DISTI # FFSH20120ADN-F155    		ON Semiconductor1200V SiC SBD 20A - Bulk (Alt: FFSH20120ADN-F155)
    Min Qty: 44
    Container: Bulk    		Americas - 0
    • 440:$7.0900
    • 220:$7.2900
    • 132:$7.3900
    • 44:$7.4900
    • 88:$7.4900
    FFSH20120ADN-F085
    DISTI # FFSH20120ADN-F085    		ON Semiconductor1200V 20AAUTO SIC SBD - Rail/Tube (Alt: FFSH20120ADN-F085)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 4500:$7.4900
    • 2700:$7.6900
    • 1800:$7.7900
    • 450:$7.8900
    • 900:$7.8900
    FFSH20120A-F085
    DISTI # 62AC6882    		ON SemiconductorSIC SCHOTTKY DIODE, AEC-Q101, TO-247,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:20A,Total Capacitive Charge Qc:120nC,Diode Case Style:TO-247,No. of Pins:2RoHS Compliant: Yes448
    • 500:$13.5300
    • 250:$14.4700
    • 100:$15.2200
    • 50:$16.2500
    • 25:$17.2700
    • 10:$18.0200
    • 1:$19.5900
    FFSH20120ADN-F155
    DISTI # 48AC1062    		ON SemiconductorSIC TO247 SBD 20A 1200V / TUBE0
    • 500:$9.4600
    • 250:$10.0900
    • 100:$10.8200
    • 50:$11.7700
    • 1:$12.9200
    FFSH20120ADN-F085
    DISTI # 65AC4721    		ON SemiconductorFFSH20120ADN-F0850
    • 500:$7.9400
    • 250:$8.1900
    • 100:$9.3500
    • 50:$9.9000
    • 25:$11.0000
    • 10:$11.3000
    • 1:$12.1000
    FFSH20120A
    DISTI # 512-FFSH20120A    		ON SemiconductorSchottky Diodes & Rectifiers Silicon Carbide Schottky Diode
    RoHS: Compliant    		190
    • 1:$10.7600
    • 10:$9.9000
    • 25:$9.4900
    • 100:$8.3600
    • 250:$7.9500
    • 500:$7.4300
    • 1000:$6.8200
    FFSH20120A-F085
    DISTI # 863-FFSH20120A-F085    		ON SemiconductorSchottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD
    RoHS: Compliant    		663
    • 1:$19.4000
    • 10:$17.8400
    • 25:$17.1000
    • 100:$15.0700
    • 250:$14.3300
    • 500:$13.4000
    FFSH20120ADN-F155
    DISTI # 512-FFSH20120ADNF155    		ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 20A
    RoHS: Compliant    		194
    • 1:$10.6700
    • 10:$9.8100
    • 25:$9.4100
    • 100:$8.2900
    • 250:$7.8800
    • 500:$7.3700
    FFSH20120ADN-F085
    DISTI # 863-FFSH20120ADNF085    		ON SemiconductorSchottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD
    RoHS: Compliant    		0
    • 1:$12.8100
    • 10:$11.7800
    • 25:$11.3000
    • 50:$11.2900
    • 100:$9.9500
    • 250:$9.4600
    • 500:$8.8500
    FFSH20120ADN-F155Fairchild Semiconductor Corporation 
    RoHS: Not Compliant    		421
    • 1000:$7.6500
    • 500:$8.0500
    • 100:$8.3800
    • 25:$8.7400
    • 1:$9.4100
    FFSH20120A-F085
    DISTI # 1784267    		ON Semiconductor1200V 20AAUTO SIC SBD, TU420
    • 150:£9.9910
    • 30:£10.7840
    FFSH20120A-F085
    DISTI # 2895630    		ON SemiconductorSIC SCHOTTKY DIODE, AEC-Q101, TO-247448
    • 100:£10.9200
    • 50:£11.6600
    • 10:£12.3900
    • 5:£14.0600
    • 1:£14.0900
    FFSH20120A-F085
    DISTI # 2895630    		ON SemiconductorSIC SCHOTTKY DIODE, AEC-Q101, TO-247
    RoHS: Compliant    		448
    • 450:$24.0500
    • 10:$31.0300
    • 1:$34.1200
    FFSH20120ADN-F085ON Semiconductor1200V,20A,Silicon Carbide Schottky Diode400
    • 1:$37.3400
    • 100:$23.8300
    • 500:$19.6500
    • 1000:$18.0700
    Bild Teil # Beschreibung
    AQ4021-01FTG-C

    Mfr.#: AQ4021-01FTG-C

    OMO.#: OMO-AQ4021-01FTG-C

    		 TVS Diodes / ESD Suppressors 25A 2.5pF AEC-Q101
    NTHL080N120SC1

    Mfr.#: NTHL080N120SC1

    OMO.#: OMO-NTHL080N120SC1

    		 MOSFET SIC MOS 80MW 1200V
    FDPF2D3N10C

    Mfr.#: FDPF2D3N10C

    OMO.#: OMO-FDPF2D3N10C

    		 MOSFET PTNG N-CH 100V/120V
    AP101 6R8 J

    Mfr.#: AP101 6R8 J

    OMO.#: OMO-AP101-6R8-J

    		 Thick Film Resistors - Through Hole 100W 6.8 Ohm High Power
    C3M0120090D

    Mfr.#: C3M0120090D

    OMO.#: OMO-C3M0120090D

    		 MOSFET G3 SiC MOSFET 900V, 120mOhm
    SHV12-1A85-78D4K

    Mfr.#: SHV12-1A85-78D4K

    OMO.#: OMO-SHV12-1A85-78D4K

    		 Reed Relays REED RELAY SPST 1A 12V
    AQ4021-01FTG-C

    Mfr.#: AQ4021-01FTG-C

    OMO.#: OMO-AQ4021-01FTG-C-LITTELFUSE

    		 ESD Suppressors / TVS Diodes 25A 2.5pF AEC-Q101
    AP101 6R8 J

    Mfr.#: AP101 6R8 J

    OMO.#: OMO-AP101-6R8-J-OHMITE

    		 RESISTOR, 6R8, 5%, 700V, TO-247
    C3M0120090D

    Mfr.#: C3M0120090D

    OMO.#: OMO-C3M0120090D-WOLFSPEED

    		 900V, 120 MOHM, G3 SIC MOSFET
    C0603C472K5RAC7411

    Mfr.#: C0603C472K5RAC7411

    OMO.#: OMO-C0603C472K5RAC7411-428

    		 Cap Ceramic 0.0047uF 50V X7R 10% Pad SMD 0603 125°C T/R
    Verfügbarkeit
    Aktie:
    148
    Auf Bestellung:
    2131
    Menge eingeben:
    Der aktuelle Preis von FFSH20120A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    10,76 $
    10,76 $
    10
    9,90 $
    99,00 $
    25
    9,49 $
    237,25 $
    100
    8,36 $
    836,00 $
    250
    7,95 $
    1 987,50 $
    500
    7,43 $
    3 715,00 $
    1000
    6,82 $
    6 820,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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