SIR826DP-T1-GE3

Mfr. #:: SIR826DP-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N-CH 80V 60A PPAK SO-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIR826DP-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIR826DP-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Tags: SIR826D, SIR826, SIR82, SIR8, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR826DP-T1-GE3 Beschreibung

***ure Electronics: SiR826DP Series 80 V 4.8 mOhm 60 nC SMT N-Channel MOSFET - POWERPAK-SO-8

***ical: Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 80V 60A PPAK SO-8

***: N-CHANNEL 80-V (D-S)

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:104W; No. Of Pins:8Pins Rohs Compliant: Yes

***nell: MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

***ment14 APAC: MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SIR826DP-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIR826DP-T1-GE3 DISTI # V72:2272_09216024	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R RoHS: Compliant	0
SIR826DP-T1-GE3 DISTI # V36:1790_09216024	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000000:$1.5540 1500000:$1.5550 300000:$1.5810 30000:$1.6110 3000:$1.6160
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5990In Stock	1000:$1.4898 500:$1.7980 100:$2.1884 10:$2.7230 1:$3.0300
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5990In Stock	1000:$1.4898 500:$1.7980 100:$2.1884 10:$2.7230 1:$3.0300
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$1.2968 3000:$1.3466
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.2180 18000:$1.2516 12000:$1.2873 6000:$1.3418 3000:$1.3828
SIR826DP-T1-GE3 DISTI # SIR826DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€1.0289 18000:€1.0879 12000:€1.2249 6000:€1.4859 3000:€2.1209
SIR826DP-T1-GE3 DISTI # 94T2658	Vishay Intertechnologies	MOSFET, N CH, 80V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$1.7700 500:$2.0600 250:$2.3600 100:$2.6500 50:$2.9300 25:$3.1700 1:$3.3300
SIR826DP-T1-GE3. DISTI # 15AC4249	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:104W,No. of Pins:8Pins RoHS Compliant: Yes	0	30000:$1.2200 18000:$1.2600 12000:$1.2900 6000:$1.3500 1:$1.3900
SIR826DP-T1-GE3 DISTI # 78-SIR826DP-T1-GE3	Vishay Intertechnologies	MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant	7407	1:$2.9500 10:$2.4500 100:$1.9000 500:$1.6600 1000:$1.3700 3000:$1.2800
SIR826DP-T1-GE3	Vishay Intertechnologies	MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET	Americas - 3000	3000:$1.3080 6000:$1.2650 12000:$1.2020 24000:$1.1650
SIR826DP-T1-GE3.	Vishay Intertechnologies	MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant	Americas - 3000	10:$2.2050 100:$1.7110 250:$1.6020 500:$1.4940 1000:$1.4580

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIR826DP-T1-GE3 OMO.#: OMO-SIR826DP-T1-GE3	MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
	Mfr.#: SIR826DP-T1-RE3 OMO.#: OMO-SIR826DP-T1-RE3	MOSFET 80V Vds TrenchFET PowerPAK SO-8
	Mfr.#: SIR826DP OMO.#: OMO-SIR826DP-1190	Neu und Original
	Mfr.#: SIR826DP-T1-GE3 OMO.#: OMO-SIR826DP-T1-GE3-VISHAY	MOSFET N-CH 80V 60A PPAK SO-8
	Mfr.#: SIR826DP-T1-RE3 OMO.#: OMO-SIR826DP-T1-RE3-VISHAY	MOSFET N-CH 80V 60A POWERPAKSO-8

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SIR826DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,75 $~~; ~~1,75 $~~

10: ~~1,66 $~~; ~~16,60 $~~

100: ~~1,57 $~~; ~~157,28 $~~

500: ~~1,49 $~~; ~~742,70 $~~

1000: ~~1,40 $~~; ~~1 398,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIR826D 3
SIR826 6
SIR82 9
SIR8 109
SIR 693

SIR826DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes