NE3509M04-A

NE3509M04-A
Mfr. #:
NE3509M04-A
Hersteller:
CEL
Beschreibung:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE3509M04-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
CEL
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Montageart
SMD/SMT
Paket-Koffer
FTSMM-4 (M04)
Technologie
GaAs
Transistor-Typ
HFET
Gewinnen
17.5 dB
Pd-Verlustleistung
150 mW
Maximale-Betriebstemperatur
+ 150 C
Arbeitsfrequenz
2 GHz
ID-Dauer-Drain-Strom
60 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
80 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Gate-Source-Cutoff-Spannung
- 0.5 V
NF-Geräusch-Abbildung
0.4 dB
P1dB-Kompressionspunkt
11 dBm
Tags
NE3509, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Small Signal GaAs FETs L to S Band Lo Noise Amplifier N-Ch HJFET
***et
Trans JFET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR HFET
***th Star Micro
AMP HJ-FET 2GHZ 4-SMINI
Teil # Mfg. Beschreibung Aktie Preis
NE3509M04-A
DISTI # NE3509M04-A-ND
California Eastern Laboratories (CEL)FET RF 4V 2GHZ 4-SMINI
RoHS: Compliant
Min Qty: 120
Container: Bulk
Limited Supply - Call
    NE3509M04-A
    DISTI # 551-NE3509M04-A
    California Eastern Laboratories (CEL)RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
    RoHS: Compliant
    0
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von NE3509M04-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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