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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI5499DC-T1-GE3 DISTI # SI5499DC-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 8V 6A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 298In Stock |
|
| SI5499DC-T1-GE3 DISTI # SI5499DC-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 8V 6A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 298In Stock |
|
| SI5499DC-T1-GE3 DISTI # SI5499DC-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 8V 6A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5499DC-T1-E3 DISTI # SI5499DC-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 8V 6A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5499DC-T1-E3 DISTI # SI5499DC-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 8V 6A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI5499DC-T1-E3 DISTI # SI5499DC-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 8V 6A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI5499DC-T1-E3 | Vishay Intertechnologies | 3000 | ||
| SI5499DCT1E3 | Vishay Siliconix | Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2750 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI5499DC-T1 OMO.#: OMO-SI5499DC-T1-1190 |
Neu und Original |
|
|
Mfr.#: SI5499DCT1E3 OMO.#: OMO-SI5499DCT1E3-1190 |
Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: SI5499DC-T1-E3 OMO.#: OMO-SI5499DC-T1-E3-VISHAY |
MOSFET P-CH 8V 6A 1206-8 |
|
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Mfr.#: SI5499DC-T1-GE3 OMO.#: OMO-SI5499DC-T1-GE3-VISHAY |
MOSFET P-CH 8V 6A 1206-8 |