BUK6507-55C

Mfr. #:: BUK6507-55C
Hersteller:: NXP Semiconductors
Beschreibung:
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BUK6507-55C Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: BUK6507-5, BUK650, BUK65, BUK6, BUK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BUK6507-55C Beschreibung

***ical: Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-220AB

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET,N CH,55V,72A,SOT78; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:158W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:158W; Voltage Vgs Max:16V

***ure Electronics: N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

***emi: N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ

***Yang: Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***enic: 55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

***ical: Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail

***peria: BUK654R6-55C - N-channel TrenchMOS intermediate level FET

***or: PFET, 100A I(D), 55V, 0.008OHM,

***ark: N CH MOSFET, TRENCH AUTO, 55V, 100A, 3TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V;RoHS Compliant: Yes

***ical: Trans MOSFET N-CH 55V 73A Automotive 3-Pin(3+Tab) TO-220AB Rail

***or: PFET, 73A I(D), 55V, 0.014OHM, 1

***el Electronic: TRIAC SENS GATE 600V 15A TO220AB

***peria: N-channel TrenchMOS standard level FET

***ernational Rectifier: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package

***ure Electronics: Single N-Channel 60 V 8.5 mOhm 86 nC Automotive HEXFET® Power Mosfet - TO-220-3

***(Formerly Allied Electronics): AUTOMOTIVE MOSFET 60V, 84A, 8.5 MOHM, 58 NC QG, TO-220

***et: Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB Tube

***ment14 APAC: MOSFET,W DIODE,N CH,60V,75A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:20V

***ponent Stockers USA: 77 A 55 V 0.0091 ohm N-CHANNEL Si POWER MOSFET TO-220AB

*** Electronic Components: IGBT Transistors MOSFET N-Ch 55V 77A TO220-3

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ark: Mosfet Transistor, N Channel, 100 A, 40 V, 3.9 Mohm, 10 V, 3 V

***el Electronic: TRANSISTOR 100 A, 40 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power

***nell: MOSFET, N CH, 40V, 100A, TO-220; Transistor Polarity:N-Channel; Current Id Max:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:148W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2010)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BUK6507-55C,127 DISTI # 568-7487-5-ND	NXP Semiconductors	MOSFET N-CH 55V 100A TO220AB RoHS: Not compliant Min Qty: 5000 Container: Tube	Limited Supply - Call
BUK6507-55C127 DISTI # BUK6507-55C127	Avnet, Inc.	- Bulk (Alt: BUK6507-55C127) Min Qty: 511 Container: Bulk	Americas - 0	5110:$0.5899 2555:$0.6039 1533:$0.6199 1022:$0.6359 511:$0.6439
BUK6507-55C,127 DISTI # 771-BUK650755C127	Nexperia	MOSFET N-CHAN 55V 100A RoHS: Compliant	0
BUK6507-55C127	NXP Semiconductors	Now Nexperia BUK6507-55C - Power Field-Effect Transistor, 100A I(D), 55V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	4728	1000:$0.6500 500:$0.6800 100:$0.7100 25:$0.7400 1:$0.7900

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BUK652R0-30C,127 OMO.#: OMO-BUK652R0-30C-127-NXP-SEMICONDUCTORS	MOSFET N-CH 30V 120A TO220AB
	Mfr.#: BUK653R7-30C,127 OMO.#: OMO-BUK653R7-30C-127-NXP-SEMICONDUCTORS	MOSFET N-CH 30V 100A TO220AB
	Mfr.#: BUK6507-55C OMO.#: OMO-BUK6507-55C-1190	Neu und Original
	Mfr.#: BUK6507-75C127 OMO.#: OMO-BUK6507-75C127-1190	- Bulk (Alt: BUK6507-75C127)
	Mfr.#: BUK652R0-30C OMO.#: OMO-BUK652R0-30C-1190	Neu und Original
	Mfr.#: BUK652R0-30C127 OMO.#: OMO-BUK652R0-30C127-1190	Now Nexperia BUK652R0-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: BUK653R4-40C127 OMO.#: OMO-BUK653R4-40C127-1190	- Bulk (Alt: BUK653R4-40C127)
	Mfr.#: BUK654R0-75C127 OMO.#: OMO-BUK654R0-75C127-1190	- Bulk (Alt: BUK654R0-75C127)
	Mfr.#: BUK654R8-40C OMO.#: OMO-BUK654R8-40C-1190	Neu und Original
	Mfr.#: BUK657-500A OMO.#: OMO-BUK657-500A-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von BUK6507-55C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BUK6507-5 3
BUK650 6
BUK65 55
BUK6 205
BUK 2072

BUK6507-55C

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes