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IRFU3410PBF

IRFU3410PBF
Mfr. #:
IRFU3410PBF
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET MOSFT 100V 31A 39mOhm 37nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFU3410PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU3410PBF DatasheetIRFU3410PBF Datasheet (P4-P6)IRFU3410PBF Datasheet (P7-P9)IRFU3410PBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
I
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
Durchgangsloch
Paket-Koffer
IPAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
110 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
31 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
39 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
37 nC
Tags
IRFU3410P, IRFU3410, IRFU34, IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 100V, 31A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:39ohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; Termination Type:Through Hole; Turn Off Time:13ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFU3410PBF
DISTI # 21065072		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube3931
  • 2500:$0.3196
  • 1000:$0.3290
  • 500:$0.3389
  • 250:$0.3495
  • 100:$0.3608
  • 33:$0.3728
IRFU3410PBF
DISTI # IRFU3410PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 31A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2915In Stock
  • 1000:$0.4744
  • 500:$0.6009
  • 100:$0.7748
  • 10:$0.9800
  • 1:$1.1100
IRFU3410PBF
DISTI # C1S322000496844		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3931
  • 1000:$0.5240
  • 500:$0.5710
  • 100:$0.6950
  • 50:$0.7790
  • 25:$0.8570
  • 5:$2.1400
IRFU3410PBF
DISTI # IRFU3410PBF		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU3410PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.3309
  • 6000:$0.3189
  • 12000:$0.3069
  • 18000:$0.2969
  • 30000:$0.2919
IRFU3410PBF
DISTI # SP001578398		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK (Alt: SP001578398)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.9489
  • 10:€0.8119
  • 25:€0.8099
  • 50:€0.8079
  • 100:€0.6209
  • 500:€0.5479
  • 1000:€0.4329
IRFU3410PBF
DISTI # 70018370		Infineon Technologies AGIRFU3410PBF N-channel MOSFET Transistor,31 A,100 V,3-Pin IPAK
RoHS: Compliant		0
  • 15:$1.6400
IRFU3410PBF
DISTI # 942-IRFU3410PBF		Infineon Technologies AGMOSFET MOSFT 100V 31A 39mOhm 37nC
RoHS: Compliant		147
  • 1:$1.1100
  • 10:$0.9450
  • 100:$0.7260
  • 500:$0.6410
  • 1000:$0.5060
  • 2500:$0.4490
IRFU3410PBFInfineon Technologies AGPower Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		1050
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
IRFU3410PBFInternational RectifierPower Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		73
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
IRFU3410PBF
DISTI # 9075107P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 100V 31A IPAK, TU2145
  • 150:£0.5440
IRFU3410PBF
DISTI # 8659028		Infineon Technologies AGMOSFET, N, 100V, 31A, I-PAK
RoHS: Compliant		0
  • 1:$1.7600
  • 10:$1.5000
  • 100:$1.1500
  • 500:$1.0200
  • 1000:$0.8020
  • 2500:$0.7110
Bild Teil # Beschreibung
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 Neu und Original
IRFU3910PBF,IRFU3910,FU3

Mfr.#: IRFU3910PBF,IRFU3910,FU3

OMO.#: OMO-IRFU3910PBF-IRFU3910-FU3-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IRFU3410PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,42 $
0,42 $
10
0,40 $
3,97 $
100
0,38 $
37,65 $
500
0,36 $
177,80 $
1000
0,33 $
334,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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