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DMN6069SFG-7

DMN6069SFG-7
Mfr. #:
DMN6069SFG-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN6069SFG-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerDI3333-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
63 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
14 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
930 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN6069
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
3.3 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
3.6 ns
Gewichtseinheit:
0.002540 oz
Tags
DMN6069SF, DMN6069, DMN606, DMN60, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 60V 18A 8-Pin PowerDI 3333 T/R
***ure Electronics
N-Channel 60V 5.6A (Ta), 18A (Tc) 930mW (Ta) Surface Mount PowerDI3333-8
***i-Key
MOSFET N-CH 60V 5.6A POWERDI333
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:930Mw; No. Of Pins:8Pins Rohs Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
DMN6069SFG-7
DISTI # 33949983		Zetex / Diodes IncN Channel MOSFET14000
  • 2000:$0.1750
DMN6069SFG-7
DISTI # DMN6069SFG-7DICT-ND		Diodes IncorporatedMOSFET N-CH 60V 5.6A POWERDI333
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		514In Stock
  • 1000:$0.2451
  • 500:$0.3172
  • 100:$0.4038
  • 10:$0.5410
  • 1:$0.6300
DMN6069SFG-7
DISTI # DMN6069SFG-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 5.6A POWERDI333
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		514In Stock
  • 1000:$0.2451
  • 500:$0.3172
  • 100:$0.4038
  • 10:$0.5410
  • 1:$0.6300
DMN6069SFG-7
DISTI # DMN6069SFG-7DITR-ND		Diodes IncorporatedMOSFET N-CH 60V 5.6A POWERDI333
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50000:$0.1862
  • 10000:$0.1890
  • 6000:$0.2030
  • 2000:$0.2170
DMN6069SFG-7
DISTI # V36:1790_13884657		Zetex / Diodes IncN Channel MOSFET0
  • 2000000:$0.1631
  • 1000000:$0.1633
  • 200000:$0.1761
  • 20000:$0.1967
  • 2000:$0.2000
DMN6069SFG-7
DISTI # DMN6069SFG-7		Diodes IncorporatedTrans MOSFET N-CH 60V 18A 8-Pin PowerDI 3333 T/R (Alt: DMN6069SFG-7)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Europe - 0
  • 20000:€0.1539
  • 12000:€0.1649
  • 8000:€0.1879
  • 4000:€0.2019
  • 2000:€0.2789
DMN6069SFG-7
DISTI # DMN6069SFG-7		Diodes IncorporatedTrans MOSFET N-CH 60V 18A 8-Pin PowerDI 3333 T/R - Tape and Reel (Alt: DMN6069SFG-7)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.1429
  • 12000:$0.1459
  • 8000:$0.1529
  • 4000:$0.1599
  • 2000:$0.1679
DMN6069SFG-7.
DISTI # 60AC8805		Diodes IncorporatedTransistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:60V,On Resistance Rds(on):50mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:930mW,No. of Pins:8Pins RoHS Compliant: No0
  • 20000:$0.1430
  • 12000:$0.1460
  • 8000:$0.1530
  • 4000:$0.1600
  • 1:$0.1680
DMN6069SFG-13
DISTI # 621-DMN6069SFG-13		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
RoHS: Compliant		0
  • 1:$0.6100
  • 10:$0.5060
  • 100:$0.3090
  • 1000:$0.2390
  • 3000:$0.2030
DMN6069SFG-7
DISTI # 621-DMN6069SFG-7		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
RoHS: Compliant		0
  • 2000:$0.2030
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von DMN6069SFG-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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