DMN6069

DMN6069SE-13 vs DMN6069SFG-13 vs DMN6069SFG-7

 
PartNumberDMN6069SE-13DMN6069SFG-13DMN6069SFG-7
DescriptionMOSFET MOSFET BVDSS: 41V~60V SOT223 T&R 2.5KMOSFET 60V N-Ch Enh FET 60Vgss 25A IdmMOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-3PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current4.3 A18 A18 A
Rds On Drain Source Resistance69 mOhms63 mOhms63 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge16 nC14 nC14 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation11 W930 mW930 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time5.3 ns3.3 ns3.3 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time6.7 ns5 ns5 ns
Factory Pack Quantity250030002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time16 ns12 ns12 ns
Typical Turn On Delay Time3.8 ns3.6 ns3.6 ns
Unit Weight0.003951 oz0.002540 oz0.002540 oz
RoHS-YY
Series-DMN6069DMN6069
Transistor Type-1 N-Channel1 N-Channel
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN6069SFGQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMN6069SE-13 MOSFET MOSFET BVDSS: 41V~60V SOT223 T&R 2.5K
DMN6069SFG-13 MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
DMN6069SFG-7 MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
DMN6069SE Neu und Original
DMN6069SE , WM8983GEFL/R Neu und Original
DMN6069SFG-7 N Channel MOSFET
DMN6069SFGQ-7 MOSFET N-CH 60V 18A POWERDI3333
DMN6069SE-13 MOSFETN-CH 60VSOT223
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