HGTD1N120BNS9A

HGTD1N120BNS9A
Mfr. #:
HGTD1N120BNS9A
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 1200V 5.3A 60W TO252AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTD1N120BNS9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.009184 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3, DPak (2 Leads + Tab), SC-63
Eingabetyp
Standard
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
TO-252AA
Aufbau
Single
Leistung max
60W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
5.3A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
6A
Vce-on-Max-Vge-Ic
2.9V @ 15V, 1A
Schaltenergie
70μJ (on), 90μJ (off)
Gate-Gebühr
14nC
Td-ein-aus-25°C
15ns/67ns
Testbedingung
960V, 1A, 82 Ohm, 15V
Pd-Verlustleistung
60 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.5 V
Kontinuierlicher Kollektorstrom-bei-25-C
5.3 A
Gate-Emitter-Leckstrom
+/- 250 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
5.3 A
Tags
HGTD1N120BN, HGTD1N, HGTD1, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
HGTD1N120BNS9A
DISTI # V72:2272_06301347
ON SemiconductorNPTPIGBT TO252 5.3A 1200V2512
  • 1000:$0.6572
  • 500:$0.8194
  • 250:$0.8848
  • 100:$0.9194
  • 25:$1.1703
  • 10:$1.1721
  • 1:$1.3556
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ACT-ND
ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6782In Stock
  • 1000:$0.7524
  • 500:$0.9468
  • 100:$1.1412
  • 10:$1.4570
  • 1:$1.6200
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ADKR-ND
ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6782In Stock
  • 1000:$0.7524
  • 500:$0.9468
  • 100:$1.1412
  • 10:$1.4570
  • 1:$1.6200
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ATR-ND
ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$0.6518
  • 2500:$0.6832
HGTD1N120BNS9A
DISTI # 27193709
ON SemiconductorNPTPIGBT TO252 5.3A 1200V2512
  • 1000:$0.6572
  • 500:$0.8194
  • 250:$0.8848
  • 100:$0.9194
  • 25:$1.1704
  • 13:$1.1721
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9A
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R (Alt: HGTD1N120BNS9A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 2500
  • 2500:$0.5980
  • 5000:$0.5750
  • 7500:$0.5537
  • 12500:$0.5339
  • 25000:$0.5155
  • 62500:$0.4983
  • 125000:$0.4902
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9A
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: HGTD1N120BNS9A)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5359
  • 5000:$0.5329
  • 10000:$0.5259
  • 15000:$0.5189
  • 25000:$0.5059
HGTD1N120BNS9A
DISTI # 31Y1823
ON SemiconductorIGBT Single Transistor, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 , RoHS Compliant: Yes21277
  • 1:$1.5600
  • 10:$1.3300
  • 25:$1.2300
  • 50:$1.1300
  • 100:$1.0300
  • 250:$0.9770
  • 500:$0.9200
  • 1000:$0.7360
HGTD1N120BNS9A
DISTI # 82C5178
ON SemiconductorSINGLE IGBT, 1.2KV, 5.3A, FULL REEL,DC Collector Current:5.3A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:60W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C, RoHS Compliant: Yes0
  • 1:$0.6340
  • 2500:$0.6300
  • 10000:$0.6070
  • 25000:$0.5890
HGTD1N120BNS9A
DISTI # 512-HGTD1N120BNS9A
ON SemiconductorIGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
RoHS: Compliant
2393
  • 1:$1.4800
  • 10:$1.2600
  • 100:$0.9670
  • 500:$0.8550
  • 1000:$0.6750
  • 2500:$0.5980
  • 10000:$0.5760
HGTD1N120BNS9AFairchild Semiconductor Corporation 1804
    HGTD1N120BNS9AFairchild Semiconductor Corporation 
    RoHS: Not Compliant
    Europe - 46917
      HGTD1N120BNS9A
      DISTI # 2453921
      ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant
      21347
      • 5:£1.1900
      • 25:£1.0800
      • 100:£0.8300
      • 250:£0.7820
      • 500:£0.7330
      HGTD1N120BNS9A
      DISTI # C1S226600689984
      ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant
      2512
      • 250:$0.8848
      • 100:$0.9194
      • 10:$1.1721
      HGTD1N120BNS9A
      DISTI # C1S541901472166
      ON SemiconductorIGBT Chip
      RoHS: Compliant
      30000
      • 2500:$0.3470
      HGTD1N120BNS9A
      DISTI # 2453921RL
      ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant
      0
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.5400
      • 500:$1.3600
      • 1000:$1.0800
      • 2500:$0.9470
      • 10000:$0.9120
      HGTD1N120BNS9A
      DISTI # 2453921
      ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant
      21277
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.5400
      • 500:$1.3600
      • 1000:$1.0800
      • 2500:$0.9470
      • 10000:$0.9120
      Bild Teil # Beschreibung
      HGTD1N120BNS9A

      Mfr.#: HGTD1N120BNS9A

      OMO.#: OMO-HGTD1N120BNS9A

      IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
      HGTD1N120BNS9A

      Mfr.#: HGTD1N120BNS9A

      OMO.#: OMO-HGTD1N120BNS9A-ON-SEMICONDUCTOR

      IGBT 1200V 5.3A 60W TO252AA
      HGTD1N120B

      Mfr.#: HGTD1N120B

      OMO.#: OMO-HGTD1N120B-1190

      Neu und Original
      HGTD1N120BNS

      Mfr.#: HGTD1N120BNS

      OMO.#: OMO-HGTD1N120BNS-1190

      IGBT Transistors NPTPIGBT TO252 5.3A 1200V
      HGTD1N120BNS 1N120B

      Mfr.#: HGTD1N120BNS 1N120B

      OMO.#: OMO-HGTD1N120BNS-1N120B-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von HGTD1N120BNS9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,52 $
      0,52 $
      10
      0,49 $
      4,94 $
      100
      0,47 $
      46,85 $
      500
      0,44 $
      221,20 $
      1000
      0,42 $
      416,40 $
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