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SIHA11N80E-GE3

SIHA11N80E-GE3
Mfr. #:
SIHA11N80E-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CHAN 800V TO-220FP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHA11N80E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHA11N80E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHA1, SIHA, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 12A 3-Pin TO-220FP
***ark
Mosfet, N-Ch, 800V, 12A, 150Deg C, 34W Rohs Compliant: Yes
***i-Key
MOSFET N-CH 800V 12A TO220
*** Europe
N-CH SINGLE 800V TO220FP
***S
new, original packaged
***
N-CHANNEL 800V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHA11N80E-GE3
DISTI # V99:2348_21764874		Vishay IntertechnologiesSIHA11N80E-GE3963
  • 2500:$1.6940
  • 1000:$1.7210
  • 500:$2.1140
  • 250:$2.3230
  • 100:$2.3880
  • 10:$2.9430
  • 1:$3.8643
SIHA11N80E-GE3
DISTI # V36:1790_21764874		Vishay IntertechnologiesSIHA11N80E-GE30
  • 1000000:$1.7370
  • 500000:$1.7400
  • 100000:$2.0920
  • 10000:$2.7480
  • 1000:$2.8600
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 800V TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		954In Stock
  • 5000:$1.7123
  • 3000:$1.7791
  • 1000:$1.8728
  • 100:$2.6085
  • 25:$3.0100
  • 10:$3.1840
  • 1:$3.5400
SIHA11N80E-GE3
DISTI # 27527547		Vishay IntertechnologiesSIHA11N80E-GE3963
  • 2500:$1.6940
  • 1000:$1.7210
  • 500:$2.1140
  • 250:$2.3230
  • 100:$2.3880
  • 10:$2.9430
  • 4:$3.8643
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP - Tape and Reel (Alt: SIHA11N80E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP (Alt: SIHA11N80E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.4900
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.7900
SIHA11N80E-GE3
DISTI # 78AC6507		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1000
  • 500:$2.1400
  • 100:$2.4600
  • 50:$2.6400
  • 25:$2.8100
  • 10:$2.9900
  • 1:$3.6100
SIHA11N80E-GE3
DISTI # 78-SIHA11N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		884
  • 1:$3.5700
  • 10:$2.9600
  • 100:$2.4400
  • 250:$2.3600
  • 500:$2.1200
SIHA11N80E-GE3
DISTI # 2932902		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W1000
  • 500:£1.5400
  • 250:£1.7100
  • 100:£1.7700
  • 10:£2.1400
  • 1:£2.9200
SIHA11N80E-GE3
DISTI # 2932902		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W
RoHS: Compliant		1000
  • 1000:$2.9300
  • 500:$3.0900
  • 250:$3.2800
  • 100:$3.5700
  • 10:$4.1200
  • 1:$4.7300
Bild Teil # Beschreibung
SIHA11N80E-GE3

Mfr.#: SIHA11N80E-GE3

OMO.#: OMO-SIHA11N80E-GE3

 MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
SIHA11N80E

Mfr.#: SIHA11N80E

OMO.#: OMO-SIHA11N80E-1190

 Neu und Original
SIHA11N80E-GE3

Mfr.#: SIHA11N80E-GE3

OMO.#: OMO-SIHA11N80E-GE3-VISHAY

 MOSFET N-CHAN 800V TO-220FP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von SIHA11N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,38 $
2,38 $
10
2,27 $
22,66 $
100
2,15 $
214,65 $
500
2,03 $
1 013,65 $
1000
1,91 $
1 908,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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