CGHV96100F2

CGHV96100F2
Mfr. #:
CGHV96100F2
Hersteller:
N/A
Beschreibung:
RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CGHV96100F2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CGHV96100F2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
CREE
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Tablett
Montageart
Schraube
Betriebstemperaturbereich
-
Paket-Koffer
440210
Technologie
GaN SiC
Aufbau
Single
Transistor-Typ
HEMT
Gewinnen
12.4 dB
Klasse
-
Ausgangsleistung
131 W
Pd-Verlustleistung
-
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Anwendung
-
Arbeitsfrequenz
7.9 GHz to 9.6 GHz
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Widerstand
-
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
-
Entwicklungs-Kit
CGHV96100F2-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Gate-Source-Cutoff-Spannung
-
Maximum-Drain-Gate-Spannung
-
NF-Geräusch-Abbildung
-
P1dB-Kompressionspunkt
-
Tags
CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Teil # Mfg. Beschreibung Aktie Preis
CGHV96100F2
DISTI # CGHV96100F2-ND
WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray
210In Stock
  • 1:$717.5400
CGHV96100F2-TB
DISTI # CGHV96100F2-TB-ND
WolfspeedTEST FIXTURE FOR CGHV96100F2
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 1:$550.0000
CGHV96100F2
DISTI # 941-CGHV96100F2
Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
RoHS: Compliant
98
  • 1:$717.5400
CGHV96100F2-TB
DISTI # 941-CGHV96100F2-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Compliant
0
  • 1:$550.0000
Bild Teil # Beschreibung
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F1-TB

Mfr.#: CGHV96050F1-TB

OMO.#: OMO-CGHV96050F1-TB

RF Development Tools Test Board without GaN HEMT
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB

RF Development Tools Test Board without GaN HEMT
CGHV96050F2-TB

Mfr.#: CGHV96050F2-TB

OMO.#: OMO-CGHV96050F2-TB-WOLFSPEED

TEST FIXTURE FOR CGHV96050F2
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED

TEST FIXTURE FOR CGHV96100F2
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von CGHV96100F2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,00 $
1,00 $
10
1,00 $
10,00 $
100
968,68 $
96 867,90 $
500
914,86 $
457 431,75 $
1000
861,05 $
861 048,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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