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CGHV96050F2

CGHV96050F2
Mfr. #:
CGHV96050F2
Hersteller:
N/A
Beschreibung:
RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CGHV96050F2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CGHV96050F2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Qorvo
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Technologie:
GaN SiC
Vds - Drain-Source-Durchbruchspannung:
32 V
Vgs - Gate-Source-Durchbruchspannung:
100 V
Pd - Verlustleistung:
45 W
Montageart:
SMD/SMT
Verpackung:
Tablett
Aufbau:
Single
Höhe:
4.064 mm
Länge:
9.652 mm
Breite:
5.842 mm
Marke:
Qorvo
Gate-Source-Abschaltspannung:
- 2.9 V
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
Transistoren
Teil # Aliase:
1092444
Tags
CGHV960, CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Teil # Mfg. Beschreibung Aktie Preis
CGHV96050F2
DISTI # CGHV96050F2-ND		WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray		98In Stock
  • 1:$458.6800
CGHV96050F2-TB
DISTI # CGHV96050F2-TB-ND		WolfspeedTEST FIXTURE FOR CGHV96050F2
RoHS: Compliant
Min Qty: 1
Container: Bulk		3In Stock
  • 1:$550.0000
CGHV96050F2
DISTI # 941-CGHV96050F2		Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
RoHS: Compliant		5
  • 1:$458.6800
CGHV96050F2-TB
DISTI # 941-CGHV96050F2-TB		Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant		2
  • 1:$550.0000
CGHV96050F2-TB
DISTI # CGHV96050F2-TB		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		2
  • 2:$550.0000
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von CGHV96050F2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
433,77 $
433,77 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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