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IRF8788TRPBF

IRF8788TRPBF
Mfr. #:
IRF8788TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 24A 8-SO
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8788TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF8788TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
2.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11 ns
Anstiegszeit
24 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
24 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.8 V
Rds-On-Drain-Source-Widerstand
3.04 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
23 ns
Typische-Einschaltverzögerungszeit
23 ns
Qg-Gate-Ladung
44 nC
Vorwärts-Transkonduktanz-Min
95 s
Tags
IRF878, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 4000, N-Channel MOSFET, 24 A, 30 V, 8-Pin SOIC Infineon IRF8788TRPBF
***ure Electronics
Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8
***p One Stop Japan
Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 24A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
*** Source Electronics
MOSFET N-CH 30V 24A 8-SO
***ied Electronics & Automation
MOSFET; 30V 24.000A SO-8
***ukat
N-Ch 30V 24A 2,5W 0,0028R SO8
***ronik
N-CH 30V 24A 2,8mOhm SO8
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:24mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):2.8mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 24A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 30V, 24A, SOIC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:24A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF8788TRPBF
DISTI # V72:2272_13891207		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
RoHS: Compliant		2823
  • 1000:$0.4938
  • 500:$0.5958
  • 250:$0.6368
  • 100:$0.6585
  • 25:$0.8038
  • 10:$0.8074
  • 1:$0.9033
IRF8788TRPBF
DISTI # IRF8788TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 24A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11071In Stock
  • 1000:$0.6161
  • 500:$0.7804
  • 100:$1.0063
  • 10:$1.2730
  • 1:$1.4400
IRF8788TRPBF
DISTI # IRF8788TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 24A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11071In Stock
  • 1000:$0.6161
  • 500:$0.7804
  • 100:$1.0063
  • 10:$1.2730
  • 1:$1.4400
IRF8788TRPBF
DISTI # IRF8788TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 24A 8-SO
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		8000In Stock
  • 4000:$0.5583
IRF8788TRPBF
DISTI # 30325293		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
RoHS: Compliant		8000
  • 40000:$0.3709
  • 24000:$0.3779
  • 16000:$0.3910
  • 8000:$0.4051
  • 4000:$0.4202
IRF8788TRPBF
DISTI # 30615879		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
RoHS: Compliant		4285
  • 200:$0.7599
  • 100:$0.7841
  • 50:$0.8989
  • 16:$1.3260
IRF8788TRPBF
DISTI # 30610749		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 22:$1.1550
IRF8788TRPBF
DISTI # 31084436		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
RoHS: Compliant		2823
  • 1000:$0.4938
  • 500:$0.5958
  • 250:$0.6368
  • 100:$0.6585
  • 25:$0.8038
  • 18:$0.8074
IRF8788TRPBF
DISTI # IRF8788TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8788TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.4169
  • 8000:$0.4019
  • 16000:$0.3879
  • 24000:$0.3749
  • 40000:$0.3679
IRF8788TRPBF
DISTI # IRF8788TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC T/R (Alt: IRF8788TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3409
  • 8000:$0.3268
  • 12000:$0.3224
  • 20000:$0.3099
  • 40000:$0.3059
  • 100000:$0.2983
  • 200000:$0.2910
IRF8788TRPBF
DISTI # SP001565728		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC T/R (Alt: SP001565728)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.5349
  • 8000:€0.4379
  • 16000:€0.4009
  • 24000:€0.3699
  • 40000:€0.3439
IRF8788TRPBF-1
DISTI # SP001565738		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC T/R (Alt: SP001565738)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
    IRF8788TRPBF
    DISTI # 13AC9217    		Infineon Technologies AGMOSFET, N-CH, 30V, 24A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation , RoHS Compliant: Yes3913
    • 1:$1.1900
    • 10:$1.0200
    • 25:$0.9400
    • 50:$0.8600
    • 100:$0.7800
    • 250:$0.7350
    • 500:$0.6890
    • 1000:$0.5440
    IRF8788TRPBF
    DISTI # 70018026    		Infineon Technologies AGMOSFET,30V 24.000A SO-8
    RoHS: Compliant    		0
    • 4000:$1.6100
    IRF8788TRPBF
    DISTI # 942-IRF8788TRPBF    		Infineon Technologies AGMOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg
    RoHS: Compliant    		29782
    • 1:$1.1900
    • 10:$1.0200
    • 100:$0.7800
    • 500:$0.6890
    • 1000:$0.5440
    • 4000:$0.4830
    • 8000:$0.4650
    IRF8788TRPBF
    DISTI # 1300967P    		Infineon Technologies AGMOSFET HEXFET N-CH 30V 24A SOIC8, RL3960
    • 50:£0.6180
    • 500:£0.4990
    • 1000:£0.3960
    • 2500:£0.3790
    IRF8788TRPBF
    DISTI # IRF8788PBF-GURT    		Infineon Technologies AGN-Ch 30V 24A 2,5W 0,0028R SO8
    RoHS: Compliant    		6100
    • 50:€0.4490
    • 100:€0.3890
    • 500:€0.3590
    • 2000:€0.3455
    IRF8788TRPBF
    DISTI # XSLY00000000875    		INFINEON/IRSO-8
    RoHS: Compliant    		8640
    • 4000:$0.4429
    • 8640:$0.4133
    IRF8788TRPBF
    DISTI # 2725926    		Infineon Technologies AGMOSFET, N-CH, 30V, 24A, SOIC
    RoHS: Compliant    		3908
    • 1:$1.8800
    • 10:$1.6200
    • 100:$1.2400
    • 500:$1.1000
    • 1000:$0.8610
    • 4000:$0.7650
    IRF8788TRPBF
    DISTI # C1S322000487253    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
    RoHS: Compliant    		8000
    • 4000:$0.4840
    IRF8788TRPBF
    DISTI # C1S322000487262    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
    RoHS: Compliant    		4285
    • 500:$0.5250
    • 200:$0.5960
    • 100:$0.6150
    • 50:$0.7050
    • 10:$1.0400
    • 5:$1.2900
    IRF8788TRPBF
    DISTI # C1S322000487244    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
    RoHS: Compliant    		4000
    • 500:$0.4910
    • 200:$0.5170
    • 100:$0.5540
    • 50:$0.6260
    • 10:$0.8630
    • 5:$0.9240
    IRF8788TRPBF
    DISTI # 2725926    		Infineon Technologies AGMOSFET, N-CH, 30V, 24A, SOIC
    RoHS: Compliant    		3538
    • 5:£0.8080
    • 25:£0.6300
    • 100:£0.6020
    • 250:£0.5560
    • 500:£0.5090
    Bild Teil # Beschreibung
    IRF8788TRPBF

    Mfr.#: IRF8788TRPBF

    OMO.#: OMO-IRF8788TRPBF

    		 MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg
    IRF8788PBF

    Mfr.#: IRF8788PBF

    OMO.#: OMO-IRF8788PBF

    		 MOSFET 30V 1 N-CH HEXFET 2.8mOhms 44nC
    IRF8788

    Mfr.#: IRF8788

    OMO.#: OMO-IRF8788-1190

    		 Neu und Original
    IRF8788PBF-1

    Mfr.#: IRF8788PBF-1

    OMO.#: OMO-IRF8788PBF-1-1190

    		 Neu und Original
    IRF8788TFPBF

    Mfr.#: IRF8788TFPBF

    OMO.#: OMO-IRF8788TFPBF-1190

    		 Neu und Original
    IRF8788TRPBF

    Mfr.#: IRF8788TRPBF

    OMO.#: OMO-IRF8788TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 24A 8-SO
    IRF8788PBF

    Mfr.#: IRF8788PBF

    OMO.#: OMO-IRF8788PBF-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.8mOhms 44nC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IRF8788TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,44 $
    0,44 $
    10
    0,41 $
    4,15 $
    100
    0,39 $
    39,28 $
    500
    0,37 $
    185,50 $
    1000
    0,35 $
    349,20 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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