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IRF8788PBF

IRF8788PBF
Mfr. #:
IRF8788PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 2.8mOhms 44nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8788PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8788PBF DatasheetIRF8788PBF Datasheet (P4-P6)IRF8788PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
24 A
Rds On - Drain-Source-Widerstand:
3.8 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
44 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
95
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001566558
Gewichtseinheit:
0.019048 oz
Tags
IRF878, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC
***ical
Trans MOSFET N-CH 30V 24A 8-Pin SOIC Tube
***ment14 APAC
MOSFET, N-CH, 30V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:24mA; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:190A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
Teil # Mfg. Beschreibung Aktie Preis
IRF8788PBF
DISTI # IRF8788PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 24A 8-SO
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8788PBF
    DISTI # SP001566558    		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC (Alt: SP001566558)
    RoHS: Compliant
    Min Qty: 1    		Europe - 2600
    • 1000:€0.6119
    • 500:€0.6229
    • 100:€0.6399
    • 50:€0.6529
    • 25:€0.7499
    • 10:€0.8969
    • 1:€1.0699
    IRF8788PBF
    DISTI # IRF8788PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC - Bulk (Alt: IRF8788PBF)
    RoHS: Compliant
    Min Qty: 658
    Container: Bulk    		Americas - 0
    • 6580:$0.4829
    • 3290:$0.4919
    • 1974:$0.5119
    • 1316:$0.5319
    • 658:$0.5539
    IRF8788PBF
    DISTI # 71P2183    		Infineon Technologies AGMOSFET Transistor, N Channel, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V RoHS Compliant: Yes0
      IRF8788PBFInternational RectifierPower Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
      RoHS: Compliant      		64
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
      IRF8788PBF
      DISTI # 1688582      		Infineon Technologies AGMOSFET, N-CH, 30V, SO8
      RoHS: Compliant      		0
      • 10000:$1.3100
      • 2500:$1.4100
      • 1000:$1.5200
      • 500:$1.7300
      • 100:$2.0600
      • 10:$2.6300
      • 1:$3.1800
      IRF8788PBF
      DISTI # IRF8788PBF      		Infineon Technologies AGN-Ch 30V 24A 2,5W 0,0028R SO8
      RoHS: Compliant      		190
      • 19:€0.7740
      • 190:€0.6140
      • 570:€0.5740
      • 1045:€0.5530
      IRF8788TRPBF
      DISTI # IRF8788PBF-GURT      		Infineon Technologies AGN-Ch 30V 24A 2,5W 0,0028R SO8
      RoHS: Compliant      		4000
      • 50:€0.4395
      • 100:€0.3795
      • 500:€0.3495
      • 2000:€0.3366
      Bild Teil # Beschreibung
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      Mfr.#: IRF8707G

      OMO.#: OMO-IRF8707G-1190

      		 Neu und Original
      IRF8707GTRPBF

      Mfr.#: IRF8707GTRPBF

      OMO.#: OMO-IRF8707GTRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 11A 8-SOIC
      IRF8707TRPBF-1

      Mfr.#: IRF8707TRPBF-1

      OMO.#: OMO-IRF8707TRPBF-1-1190

      		 Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8707TRPBF-1)
      IRF8714BF

      Mfr.#: IRF8714BF

      OMO.#: OMO-IRF8714BF-1190

      		 Neu und Original
      IRF8714TRPBF

      Mfr.#: IRF8714TRPBF

      OMO.#: OMO-IRF8714TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A 8-SOIC
      IRF8721GTRPBF

      Mfr.#: IRF8721GTRPBF

      OMO.#: OMO-IRF8721GTRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A 8-SOIC
      IRF8736TEPBF

      Mfr.#: IRF8736TEPBF

      OMO.#: OMO-IRF8736TEPBF-1190

      		 Neu und Original
      IRF8788PBF

      Mfr.#: IRF8788PBF

      OMO.#: OMO-IRF8788PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.8mOhms 44nC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von IRF8788PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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