SIHP18N60E-GE3

SIHP18N60E-GE3
Mfr. #:
SIHP18N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP18N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP18N60E-GE3 DatasheetSIHP18N60E-GE3 Datasheet (P4-P6)SIHP18N60E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHP18N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
176 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
46 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
179 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Produkt:
Triacs
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
24 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
51 ns
Typische Einschaltverzögerungszeit:
17 ns
Gewichtseinheit:
0.063493 oz
Tags
SIHP18N, SIHP18, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 18A 3-Pin TO-220AB
***i-Key
MOSFET N-CH 600V 18A TO220AB
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP18N60E-GE3
DISTI # SIHP18N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 18A TO220AB
RoHS: Not compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.6464
SIHP18N60E-GE3
DISTI # SIHP18N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 18A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP18N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.3900
  • 10000:$1.3900
  • 2000:$1.4900
  • 4000:$1.4900
  • 1000:$1.5900
SIHP18N60E-GE3
DISTI # 78-SIHP18N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
0
  • 1000:$1.5700
  • 2000:$1.4900
  • 5000:$1.4400
Bild Teil # Beschreibung
SIHP18N50C-E3

Mfr.#: SIHP18N50C-E3

OMO.#: OMO-SIHP18N50C-E3

MOSFET 500V Vds 30V Vgs TO-220AB
SIHP18N60E-GE3

Mfr.#: SIHP18N60E-GE3

OMO.#: OMO-SIHP18N60E-GE3

MOSFET 600V Vds 30V Vgs TO-220AB
SIHP18N50C

Mfr.#: SIHP18N50C

OMO.#: OMO-SIHP18N50C-1190

Neu und Original
SIHP18N50C-E3

Mfr.#: SIHP18N50C-E3

OMO.#: OMO-SIHP18N50C-E3-VISHAY

MOSFET N-CH 500V 18A TO220
SIHP18N50C-E3,SIHP18N50C

Mfr.#: SIHP18N50C-E3,SIHP18N50C

OMO.#: OMO-SIHP18N50C-E3-SIHP18N50C-1190

Neu und Original
SIHP18N50CE3

Mfr.#: SIHP18N50CE3

OMO.#: OMO-SIHP18N50CE3-1190

Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP18N60E-GE3

Mfr.#: SIHP18N60E-GE3

OMO.#: OMO-SIHP18N60E-GE3-VISHAY

MOSFET N-CH 600V 18A TO220AB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von SIHP18N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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