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IPD80N06S3-09

IPD80N06S3-09
Mfr. #:
IPD80N06S3-09
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 55V 80A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD80N06S3-09 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD80N06S3-09 DatasheetIPD80N06S3-09 Datasheet (P4-P6)IPD80N06S3-09 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
8.4 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
107 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
37 ns
Produktart:
MOSFET
Anstiegszeit:
42 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
23 ns
Teil # Aliase:
IPD80N06S309XT
Gewichtseinheit:
0.139332 oz
Tags
IPD80N, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-252
***i-Key
MOSFET N-CH 55V 80A TO252-3
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 55 V 8 mOhm 44 nC HEXFET® Power Mosfet - TO-252AA
***essParts.Net
INTERNATIONAL RECTIFIER IRLR3705ZPBF / MOSFET N-CH 55V 42A DPAK INTER
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 6.5 Milliohms,ID 42A,D-Pak (TO-252AA),-55C
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 55V, 89A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:89A;
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 89A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: D-PAK; Current Id Max: 89A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 130A; SMD Marking: IRLR3705Z; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***ineon SCT
60V, N-Ch, 6.9 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
***ical
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et Europe
Trans MOSFET N-CH 60V 97A 3-Pin TO-252 T/R
***ronik
N-CH 60V 97A 6,3mOhm TO252 RoHSconf
***el Electronic
MOSFET 60V 97A 136W AEC-Q101 Qualified
***ark
N-Channel 60-V (D-S) 175C Mosfet
***ical
Trans MOSFET N-CH 40V 16.8A Automotive 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 31V~40V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 40V 16.8A/70A TO252
***ical
Trans MOSFET N-CH 60V 14.8A Automotive 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 60V 14.8A/70A TO252
Teil # Mfg. Beschreibung Aktie Preis
IPD80N06S3-09
DISTI # IPD80N06S3-09-ND		Infineon Technologies AGMOSFET N-CH 55V 80A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD80N06S3-09
    DISTI # IPD80N06S3-09    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-252 - Bulk (Alt: IPD80N06S3-09)
    RoHS: Not Compliant
    Min Qty: 695
    Container: Bulk    		Americas - 0
    • 6950:$0.4569
    • 3475:$0.4649
    • 2085:$0.4809
    • 1390:$0.4999
    • 695:$0.5179
    IPD80N06S3-09
    DISTI # 726-IPD80N06S3-09    		Infineon Technologies AGMOSFET N-Ch 55V 80A DPAK-2
    RoHS: Compliant    		0
      IPD80N06S3-09Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		7004
      • 1000:$0.4700
      • 500:$0.5000
      • 100:$0.5200
      • 25:$0.5400
      • 1:$0.5800
      Bild Teil # Beschreibung
      IPD80N04S306ATMA1

      Mfr.#: IPD80N04S306ATMA1

      OMO.#: OMO-IPD80N04S306ATMA1

      		 MOSFET N-CHANNEL_30/40V
      IPD80N04S3-06

      Mfr.#: IPD80N04S3-06

      OMO.#: OMO-IPD80N04S3-06

      		 MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
      IPD80N06S3-09

      Mfr.#: IPD80N06S3-09

      OMO.#: OMO-IPD80N06S3-09

      		 MOSFET N-Ch 55V 80A DPAK-2
      IPD80N04S306BATMA1

      Mfr.#: IPD80N04S306BATMA1

      OMO.#: OMO-IPD80N04S306BATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CHANNEL_30/40V
      IPD80N04S3-06QN0406

      Mfr.#: IPD80N04S3-06QN0406

      OMO.#: OMO-IPD80N04S3-06QN0406-1190

      		 Neu und Original
      IPD80N04S3-06

      Mfr.#: IPD80N04S3-06

      OMO.#: OMO-IPD80N04S3-06-1190

      		 MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
      IPD80N04S3-06 QN0406

      Mfr.#: IPD80N04S3-06 QN0406

      OMO.#: OMO-IPD80N04S3-06-QN0406-1190

      		 Neu und Original
      IPD80N04S3-06B

      Mfr.#: IPD80N04S3-06B

      OMO.#: OMO-IPD80N04S3-06B-1190

      		 Neu und Original
      IPD80N04S306ATMA1

      Mfr.#: IPD80N04S306ATMA1

      OMO.#: OMO-IPD80N04S306ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 40V 90A TO252-3
      IPD80N06S3-09

      Mfr.#: IPD80N06S3-09

      OMO.#: OMO-IPD80N06S3-09-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 80A TO252-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von IPD80N06S3-09 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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