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SIS443DN-T1-GE3

Mfr. #:: SIS443DN-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIS443DN-T1-GE3 Datenblatt
ECAD Model:

Verfügbarkeit

Aktie:: 45
Auf Bestellung:: 2028
Menge eingeben:

Der aktuelle Preis von SIS443DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,60 $~~; ~~1,60 $~~

10: ~~1,32 $~~; ~~13,20 $~~

100: ~~1,01 $~~; ~~101,00 $~~

500: ~~0,87 $~~; ~~437,00 $~~

1000: ~~0,69 $~~; ~~689,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-1212-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 40 V

Id - Kontinuierlicher Drainstrom:: 35 A

Rds On - Drain-Source-Widerstand:: 11.7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 90 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 52 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET, PowerPAK

Verpackung:: Spule

Serie:: SIS

Transistortyp:: 1 P-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 50 S

Abfallzeit:: 10 ns, 12 ns

Produktart:: MOSFET

Anstiegszeit:: 10 ns, 40 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 48 ns,50 NS

Typische Einschaltverzögerungszeit:: 12 ns, 45 NS

Tags: SIS44, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS443DN-T1-GE3 Beschreibung

***et Japan: Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R

***ure Electronics: MOSFET -40V .0117OHM@10V 35A P-CH G-III

***nell: MOSFET, P-CH, 40V, 35A, PPAK1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0097ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited

SIS443DN-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIS443DN-T1-GE3 DISTI # V72:2272_09216162	Vishay Intertechnologies	Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	104	100:$0.9952 25:$1.1434 10:$1.2704 1:$1.3390
SIS443DN-T1-GE3 DISTI # V36:1790_09216162	Vishay Intertechnologies	Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.6272 1500000:$0.6273 300000:$0.6336 30000:$0.6426 3000:$0.6440
SIS443DN-T1-GE3 DISTI # SIS443DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 40V 35A PPAK 1212-8 Min Qty: 1 Container: Cut Tape (CT)	45750In Stock	1000:$0.7107 500:$0.9002 100:$1.0897 10:$1.3980 1:$1.5600
SIS443DN-T1-GE3 DISTI # SIS443DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 40V 35A PPAK 1212-8 Min Qty: 1 Container: Digi-Reel®	45750In Stock	1000:$0.7107 500:$0.9002 100:$1.0897 10:$1.3980 1:$1.5600
SIS443DN-T1-GE3 DISTI # SIS443DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 40V 35A PPAK 1212-8 Min Qty: 3000 Container: Tape & Reel (TR)	45000In Stock	6000:$0.6118 3000:$0.6440
SIS443DN-T1-GE3 DISTI # 31005951	Vishay Intertechnologies	Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	63000	6000:$0.5754 3000:$0.5796
SIS443DN-T1-GE3 DISTI # 31688273	Vishay Intertechnologies	Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	6000	6000:$0.5506 3000:$0.5796
SIS443DN-T1-GE3 DISTI # 34239032	Vishay Intertechnologies	Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	104	100:$0.9952 25:$1.1434 10:$1.2704
SIS443DN-T1-GE3 DISTI # SIS443DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS443DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.6255 18000:$0.6420 12000:$0.6593 6000:$0.6776 3000:$0.6970
SIS443DN-T1-GE3 DISTI # 70AC6483	Vishay Intertechnologies	Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 70AC6483) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.6890 500:$0.8740 250:$0.9420 100:$1.0100 50:$1.1700 25:$1.3200 1:$1.6000
SIS443DN-T1-GE3 DISTI # 70AC6483	Vishay Intertechnologies	MOSFET, P-CH, -40V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0097ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.3V RoHS Compliant: Yes RoHS: Compliant	3420	1000:$0.6890 500:$0.8740 250:$0.9420 100:$1.0100 50:$1.1700 25:$1.3200 1:$1.6000
SIS443DN-T1-GE3 DISTI # 99W9580	Vishay Intertechnologies	MOSFET Transistor, P Channel, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V RoHS: Not Compliant	0	10000:$0.5850 6000:$0.5980 4000:$0.6210 2000:$0.6900 1000:$0.7590 1:$0.7920
SIS443DN-T1-GE3 DISTI # 70459591	Vishay Siliconix	-40V .0117Ohm@10V 35A P-Ch G-III RoHS: Not Compliant	0	3000:$0.9840
SIS443DN-T1-GE3 DISTI # 78-SIS443DN-T1-GE3	Vishay Intertechnologies	MOSFET -40V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	43090	1:$1.3000 10:$1.2800 100:$1.0100 500:$0.8910 1000:$0.7030 3000:$0.6430 6000:$0.6110 9000:$0.5980
SIS443DN-T1-GE3	Vishay Intertechnologies	MOSFET -40V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 6000	3000:$0.6730 6000:$0.6390 9000:$0.6190 12000:$0.6020
SIS443DN-T1-GE3 DISTI # 2364099	Vishay Intertechnologies	MOSFET, P-CH, 40V, 35A, PPAK1212-8 RoHS: Compliant	12752	5000:£0.4990 1000:£0.5360 500:£0.7280 250:£0.7840 100:£0.8410 10:£1.1400 1:£1.5200
SIS443DN-T1-GE3 DISTI # 2919349	Vishay Intertechnologies	MOSFET, P-CH, -40V, -35A, 150DEG C, 52W RoHS: Compliant	3420	500:£0.8040 250:£0.8670 100:£0.9290 50:£1.0800 25:£1.2200 1:£1.4700
SIS443DN-T1-GE3 DISTI # 2364099	Vishay Intertechnologies	MOSFET, P-CH, 40V, 35A, PPAK1212-8 RoHS: Compliant	10211	9000:$0.9010 6000:$0.9210 3000:$0.9690 1000:$1.0400 500:$1.3200 100:$1.5200 10:$1.9900 1:$2.4100
SIS443DN-T1-GE3 DISTI # 2919349	Vishay Intertechnologies	MOSFET, P-CH, -40V, -35A, 150DEG C, 52W RoHS: Compliant	420	9000:$0.9010 6000:$0.9210 3000:$0.9690 1000:$1.0400 500:$1.3200 100:$1.5200 10:$1.9900 1:$2.4100

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Beginnen mit

SIS44 7
SIS4 92
SIS 843

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