SIS44

SIS443DN-T1-GE3 vs SIS447DN-T1-GE3 vs SIS444DN-T1-GE3

 
PartNumberSIS443DN-T1-GE3SIS447DN-T1-GE3SIS444DN-T1-GE3
DescriptionMOSFET -40V Vds 20V Vgs PowerPAK 1212-8MOSFET -20V Vds 12V Vgs PowerPAK 1212-8MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8PowerPAK-1212-8-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance11.7 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge90 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSISSISSIS
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min50 S--
Fall Time10 ns, 12 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns, 40 ns--
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time48 ns,50 NS--
Typical Turn On Delay Time12 ns, 45 NS--
Height-1.04 mm-
Length-3.3 mm-
Width-3.3 mm-
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIS443DN-T1-GE3 MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
SIS447DN-T1-GE3 MOSFET -20V Vds 12V Vgs PowerPAK 1212-8
SIS444DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Vishay
Vishay
SIS444DN-T1-GE3 IGBT Transistors MOSFET N-Channel 30V
SIS448DN-T1-GE3 RF Bipolar Transistors MOSFET 30V 35A N-CH MOSFET
SIS443DN-T1-GE3 MOSFET P-CH 40V 35A PPAK 1212-8
SIS447DN-T1-GE3 MOSFET P-CH 20V 18A POWERPAK1212
SIS4407 Neu und Original
SIS4407LX Neu und Original
SIS448DN Neu und Original
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