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SIR846DP-T1-GE3

SIR846DP-T1-GE3
Mfr. #:
SIR846DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 100V 60A 104W 7.8mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR846DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR846DP-T1-GE3 DatasheetSIR846DP-T1-GE3 Datasheet (P4-P6)SIR846DP-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIR846DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
6.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
72 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
104 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
HERR
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
56 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
36 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SIR846DP-GE3
Gewichtseinheit:
0.017870 oz
Tags
SIR846, SIR84, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100V 0.0078 Ohm Medium Voltage ThunderFET® Mosfet POWERPAK-SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0064Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 100V, 60A, PPAK SO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Power Dissipation Pd:104W; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIR846DP-T1-GE3
DISTI # V36:1790_09216030		Vishay IntertechnologiesTrans MOSFET N-CH 100V 20A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
  • 3000000:$1.1040
  • 1500000:$1.1050
  • 300000:$1.1230
  • 30000:$1.1450
  • 3000:$1.1480
SIR846DP-T1-GE3
DISTI # V72:2272_09216030		Vishay IntertechnologiesTrans MOSFET N-CH 100V 20A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
    SIR846DP-T1-GE3
    DISTI # SIR846DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.1057
    • 3000:$1.1482
    SIR846DP-T1-GE3
    DISTI # SIR846DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2702
    • 500:$1.5330
    • 100:$1.8659
    • 10:$2.3210
    • 1:$2.5800
    SIR846DP-T1-GE3
    DISTI # SIR846DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2702
    • 500:$1.5330
    • 100:$1.8659
    • 10:$2.3210
    • 1:$2.5800
    SIR846DP-T1-GE3
    DISTI # SIR846DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 20A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR846DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 3000
    • 30000:$1.0385
    • 18000:$1.0672
    • 12000:$1.0976
    • 6000:$1.1441
    • 3000:$1.1790
    SIR846DP-T1-GE3
    DISTI # 35R6201    		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 60A,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1000:$1.3600
    • 500:$1.4300
    • 250:$1.5400
    • 100:$1.6400
    • 50:$1.8800
    • 25:$2.1200
    • 1:$2.5500
    SIR846DP-T1-GE3.
    DISTI # 28AC2112    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0064ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power Dissipation Pd:104W,No. of Pins:8Pins RoHS Compliant: Yes3000
    • 30000:$1.0400
    • 18000:$1.0700
    • 12000:$1.1000
    • 6000:$1.1500
    • 1:$1.1800
    SIR846DP-T1-GE3
    DISTI # 781-SIR846DP-GE3    		Vishay IntertechnologiesMOSFET 100V 60A 104W 7.8mohm @ 10V
    RoHS: Compliant    		0
    • 1:$2.5100
    • 10:$2.0900
    • 100:$1.6200
    • 500:$1.4100
    • 1000:$1.1700
    • 3000:$1.0900
    • 6000:$1.0500
    SIR846DP-T1-GE3
    DISTI # XSCRXDR00000015    		Vishay IntertechnologiesJFET, N-Channel, Comes with matched pair 2SK170-BL.See Associated Products section.
    RoHS: Compliant    		1384 in Stock0 on Order
    • 1:$1.5000
    SIR846DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 60A 104W 7.8mohm @ 10VAmericas -
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von SIR846DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,51 $
      2,51 $
      10
      2,09 $
      20,90 $
      100
      1,62 $
      162,00 $
      500
      1,41 $
      705,00 $
      1000
      1,17 $
      1 170,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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