STP23NM60ND

STP23NM60ND
Mfr. #:
STP23NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600V, 20A FDMesh II
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP23NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP23NM60ND Mehr Informationen STP23NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
19.5 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.4 mm
Serie:
STP23NM60ND
Transistortyp:
1 N-Channel
Breite:
4.6 mm
Marke:
STMicroelectronics
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
45 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
90 ns
Typische Einschaltverzögerungszeit:
25 ns
Gewichtseinheit:
0.011640 oz
Tags
STP23NM60ND, STP23NM6, STP23NM, STP23N, STP23, STP2, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 19.5 A, 600 V, 0.15 Ohm, 10 V, 4 V Rohs Compliant: Yes
***Components
N-Channel MOSFET, 19.5 A, 600 V, 3-Pin TO-220 STMicroelectronics STP23NM60ND
***ure Electronics
N-Channel 600 V 0.18 O Flange Mount FDmesh™ II Power MosFet - TO-220
***p One Stop Global
Trans MOSFET N-CH 600V 19.5A 3-Pin(3+Tab) TO-220 Tube
***ronik
MOSFET 600V 180mOhm 20A TO220 RoHSconf
***ied Electronics & Automation
MOSFET N-Channel 600V 19.5A TO220
***i-Key
MOSFET N-CH 600V 19.5A TO-220
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 600V, 19.5A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, CANALE N, 600V, 19.5A, TO 220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:19.5A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.15ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
STP23NM60ND
DISTI # 497-8445-5-ND
STMicroelectronicsMOSFET N-CH 600V 19.5A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    STP23NM60ND
    DISTI # STP23NM60ND
    STMicroelectronicsTrans MOSFET N-CH 600V 19.5A 3-Pin(3+Tab) TO-220 Tube (Alt: STP23NM60ND)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 600
    • 1000:€2.1400
    • 500:€2.2200
    • 250:€2.3100
    • 100:€2.4000
    • 10:€2.4800
    • 1:€2.5600
    STP23NM60ND
    DISTI # 94T3468
    STMicroelectronicsMOSFET Transistor, N Channel, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V RoHS Compliant: Yes145
    • 100:$5.1900
    • 50:$6.1500
    • 25:$6.7400
    • 10:$7.2900
    • 1:$7.7300
    STP23NM60ND
    DISTI # 511-STP23NM60ND
    STMicroelectronicsMOSFET N-channel 600V, 20A FDMesh II
    RoHS: Compliant
    0
      STP23NM60NDSTMicroelectronics 134
        STP23NM60NDSTMicroelectronics 600
          STP23NM60ND
          DISTI # 2098307
          STMicroelectronicsMOSFET, N CH, 600V, 19.5A, TO 220
          RoHS: Compliant
          145
          • 100:$7.6900
          • 50:$8.5200
          • 1:$10.4000
          STP23NM60ND
          DISTI # 2098307
          STMicroelectronicsMOSFET, N CH, 600V, 19.5A, TO 220145
          • 100:£2.9200
          • 10:£2.9800
          • 1:£3.0400
          Bild Teil # Beschreibung
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          Mfr.#: STP23NM60ND P23NM60ND

          OMO.#: OMO-STP23NM60ND-P23NM60ND-1190

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          STP23NM60ND

          Mfr.#: STP23NM60ND

          OMO.#: OMO-STP23NM60ND-STMICROELECTRONICS

          MOSFET N-CH 600V 19.5A TO-220
          STP23NM60ND,23NM60ND

          Mfr.#: STP23NM60ND,23NM60ND

          OMO.#: OMO-STP23NM60ND-23NM60ND-1190

          Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3500
          Menge eingeben:
          Der aktuelle Preis von STP23NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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