STP23NM6

STP23NM60ND vs STP23NM60N vs STP23NM60N,23NM60N

 
PartNumberSTP23NM60NDSTP23NM60NSTP23NM60N,23NM60N
DescriptionMOSFET N-channel 600V, 20A FDMesh IIMOSFET N-CH 600V 19A TO-220
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleThrough Hole--
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current19.5 A--
Rds On Drain Source Resistance180 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height9.15 mm--
Length10.4 mm--
SeriesSTP23NM60NDMDmesh II-
Transistor Type1 N-Channel--
Width4.6 mm--
BrandSTMicroelectronics--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.011640 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-600V-
Current Continuous Drain (Id) @ 25°C-19A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-60nC @ 10V-
Vgs (Max)-±25V-
Input Capacitance (Ciss) (Max) @ Vds-2050pF @ 50V-
FET Feature---
Power Dissipation (Max)-150W (Tc)-
Rds On (Max) @ Id, Vgs-180 mOhm @ 9.5A, 10V-
Operating Temperature-150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STP23NM60ND MOSFET N-channel 600V, 20A FDMesh II
STP23NM60N MOSFET N-CH 600V 19A TO-220
STP23NM60ND MOSFET N-CH 600V 19.5A TO-220
STP23NM60ND P23NM60ND Neu und Original
STP23NM60N,23NM60N Neu und Original
STP23NM60ND,23NM60ND Neu und Original
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