OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

FDU8882

FDU8882
Mfr. #:
FDU8882
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 55A I-PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDU8882 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FSC
Produktkategorie
FETs - Einzeln
Tags
FDU888, FDU88, FDU8, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 30V 55A 3-Pin (3+Tab) TO-251 Rail
***ser
MOSFETs 30V,55A,11 OHM, NCH PWR TRENCH MOSFET
***ter Electronics
30V,55A,11 OHM, NCH, IPAK, POWER TRENCH MOSFET
***eco
003, PLASTIC MOLDED, TO-251 IPAK PKG, THRU-HOLE (39)<AZ
***i-Key
MOSFET N-CH 30V 55A I-PAK
***ark
MOSFET, N, I-PAK; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:55A; Resistance, Rds on:0.0115ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.5V; Case style:I-PAK (TO-251); Case style, RoHS Compliant: Yes
***nell
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:55A; Resistance, Rds On:0.0115ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251; Current, Idm Pulse:50A; Lead Length:9.8mm; Lead Spacing:2.285mm; Power, Pd:55W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:82ns; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Transistor Case Style:I-PAK; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:TO-251; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.8mm; Lead Spacing:2.285mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:55W; Pulse Current Idm:50A; Reverse Recovery Time trr Typ:82ns; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
FDU8882
DISTI # FDU8882-ND		ON SemiconductorMOSFET N-CH 30V 55A I-PAK
RoHS: Compliant
Min Qty: 1800
Container: Tube		Limited Supply - Call
    FDU8882
    DISTI # 512-FDU8882    		ON SemiconductorMOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET
    RoHS: Compliant    		0
      FDU8882Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant      		518
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
      Bild Teil # Beschreibung
      FDU8882

      Mfr.#: FDU8882

      OMO.#: OMO-FDU8882

      		 MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET
      FDU37PG2M-K1019

      Mfr.#: FDU37PG2M-K1019

      OMO.#: OMO-FDU37PG2M-K1019-697

      		 D-Sub Dualport Connectors D-SUB DUAL PORT
      FDU6530A

      Mfr.#: FDU6530A

      OMO.#: OMO-FDU6530A-1190

      		 Neu und Original
      FDU6676AS

      Mfr.#: FDU6676AS

      OMO.#: OMO-FDU6676AS-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 90A IPAK
      FDU6696

      Mfr.#: FDU6696

      OMO.#: OMO-FDU6696-1190

      		 Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      FDU7N60NZTU

      Mfr.#: FDU7N60NZTU

      OMO.#: OMO-FDU7N60NZTU-ON-SEMICONDUCTOR

      		 MOSFET N-CH 600V SGL IPAK
      FDU8447L

      Mfr.#: FDU8447L

      OMO.#: OMO-FDU8447L-1190

      		 Neu und Original
      FDU8782_071

      Mfr.#: FDU8782_071

      OMO.#: OMO-FDU8782-071-1190

      		 Neu und Original
      FDU8796_F071

      Mfr.#: FDU8796_F071

      OMO.#: OMO-FDU8796-F071-ON-SEMICONDUCTOR

      		 MOSFET N-CH 25V 35A IPAK
      FDUE1040D-H-1R0MP3

      Mfr.#: FDUE1040D-H-1R0MP3

      OMO.#: OMO-FDUE1040D-H-1R0MP3-1190

      		 Fixed Inductors 1 UH 20%
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von FDU8882 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,75 $
      0,75 $
      10
      0,71 $
      7,12 $
      100
      0,68 $
      67,50 $
      500
      0,64 $
      318,75 $
      1000
      0,60 $
      600,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Top