IPB027N10N3GATMA1

IPB027N10N3GATMA1
Mfr. #:
IPB027N10N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V 120A TO263-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB027N10N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
XPB027N10
Verpackung
Spule
Teil-Aliasnamen
G IPB027N10N3 IPB027N10N3GXT SP000506508
Gewichtseinheit
0.068654 oz
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TO-263-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
300 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
28 ns
Anstiegszeit
58 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
120 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.7 V
Rds-On-Drain-Source-Widerstand
2.7 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
84 ns
Typische-Einschaltverzögerungszeit
34 ns
Qg-Gate-Ladung
155 nC
Vorwärts-Transkonduktanz-Min
188 S
Kanal-Modus
Erweiterung
Tags
IPB027N10N3, IPB027, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Teil # Mfg. Beschreibung Aktie Preis
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
2000In Stock
  • 1000:$3.0845
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.6900
  • 2000:$2.6900
  • 4000:$2.6900
  • 6000:$2.6900
  • 10000:$2.6900
IPB027N10N3GATMA1
DISTI # SP000506508
Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€2.6900
  • 2000:€2.5900
  • 4000:€2.4900
  • 6000:€2.2900
  • 10000:€2.0900
IPB027N10N3GATMA1
DISTI # 85X6013
Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes156
  • 1:$5.3100
  • 10:$4.5100
  • 25:$4.3100
  • 50:$4.1100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
IPB027N10N3GATMA1.
DISTI # 27AC6718
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    IPB027N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK
    RoHS: Not Compliant
    2000Reel
    • 1000:$3.0800
    IPB027N10N3 G
    DISTI # 726-IPB027N10N3G
    Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    5900
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1
    DISTI # 726-IPB027N10N3GATMA
    Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    757
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    10
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    IPB027N10N3GATMA1
    DISTI # 8259235
    Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, PK184
    • 2:£3.9150
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 8259235P
    Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, RL922
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 2443379
    Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant
    154
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379RL
    Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant
    0
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379
    Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant
    254
    • 1:£3.7700
    • 10:£2.7600
    • 100:£2.4800
    • 250:£2.3000
    • 500:£2.1100
    IPB027N10N3GATMA1
    DISTI # XSFP00000103332
    Infineon Technologies AG 
    RoHS: Compliant
    1346
    • 1000:$4.1100
    • 1346:$3.8500
    Bild Teil # Beschreibung
    IPB027N10N3 G

    Mfr.#: IPB027N10N3 G

    OMO.#: OMO-IPB027N10N3-G

    MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    IPB027N10N3GATMA1

    Mfr.#: IPB027N10N3GATMA1

    OMO.#: OMO-IPB027N10N3GATMA1

    MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    IPB027N10N3G

    Mfr.#: IPB027N10N3G

    OMO.#: OMO-IPB027N10N3G-1190

    MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL
    IPB027N10N3GATMA1

    Mfr.#: IPB027N10N3GATMA1

    OMO.#: OMO-IPB027N10N3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V 120A TO263-3
    IPB027N10N5ATMA1-CUT TAPE

    Mfr.#: IPB027N10N5ATMA1-CUT TAPE

    OMO.#: OMO-IPB027N10N5ATMA1-CUT-TAPE-1190

    Neu und Original
    IPB027N10N  027N10N

    Mfr.#: IPB027N10N 027N10N

    OMO.#: OMO-IPB027N10N-027N10N-1190

    Neu und Original
    IPB027N10N3GS

    Mfr.#: IPB027N10N3GS

    OMO.#: OMO-IPB027N10N3GS-1190

    Neu und Original
    IPB027N10N5

    Mfr.#: IPB027N10N5

    OMO.#: OMO-IPB027N10N5-1190

    N-CH 100V 120A 2,7mOhm TO263-3
    IPB027N10N3 G

    Mfr.#: IPB027N10N3 G

    OMO.#: OMO-IPB027N10N3-G-126

    IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    IPB027N10N5ATMA1

    Mfr.#: IPB027N10N5ATMA1

    OMO.#: OMO-IPB027N10N5ATMA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von IPB027N10N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,56 $
    3,56 $
    10
    3,38 $
    33,84 $
    100
    3,21 $
    320,63 $
    500
    3,03 $
    1 514,05 $
    1000
    2,85 $
    2 850,00 $
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