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IRFB3307ZGPBF

IRFB3307ZGPBF
Mfr. #:
IRFB3307ZGPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors MOSFET MOSFT 75V 120A 5.8mOhm 79nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB3307ZGPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB3307ZGPBF DatasheetIRFB3307ZGPBF Datasheet (P4-P6)IRFB3307ZGPBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Tags
IRFB3307ZG, IRFB3307Z, IRFB3307, IRFB330, IRFB33, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
75V Single N-Channel HEXFET Power MOSFET in a Lead-Free Halogen-Free TO-220AB package
***ure Electronics
Single N-Channel 75 V 5.8 mOhm 79 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, 75V, 120A, 5.8 MOHM, 79 NC QG, TO-220AB, HALOGEN-FREE
***et
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:120A; On Resistance, Rds(on):5.8mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5 Milliohms;ID 130A;TO-220AB;PD 250W;gFS 98S
***ure Electronics
Single N-Channel 75 V 6.3 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:510A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ical
Trans MOSFET N-CH 55V 145A Automotive 3-Pin(3+Tab) TO-220AB Rail
***ponent Stockers USA
75 A 55 V 0.006 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***el Electronic
TRIAC SENS GATE 400V 15A TO220AB
***S
French Electronic Distributor since 1988
***peria
N-channel TrenchMOS standard level FET
***(Formerly Allied Electronics)
IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB
*** Source Electronics
MOSFET N-CH 60V 120A TO-220AB / Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3
*** Stop Electro
Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3306; Current Id Max:120A; N-channel Gate Charge:85nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
***(Formerly Allied Electronics)
MOSFET, 60V, 160A, 4.2 MOHM, 85 NC QG, TO-220AB, HALOGEN-FREE
***Yang
Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:160A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):4.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:230W ;RoHS Compliant: Yes
***emi
60 V, 120 A, 6 mOhm Single N-Channel Power MOSFET, TO-220
***Yang
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:130A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:214W ;RoHS Compliant: Yes
***et
Transistor MOSFET N-CH 60V 90A 3-Pin TO-220AB
***enic
60V 90A 3.75W 6m´Î@10V20A 4.5V@250Ã×A N Channel TO-220AB MOSFETs ROHS
***ronik
N-CH 60V 90A 6mOhm TO220-3 RoHSconf
***ure Electronics
MOSFET 60V 90A 272W 6.0mohm @ 10V
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:60V; Cont Current Id:90A; On State Resistance:0.006ohm; Voltage Vgs Rds on Measurement:10V; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Max Current Id:90A; Max Junction Temperature Tj:175°C; Max Voltage Vds:60V; Max Voltage Vgs:20V; Max Voltage Vgs th:4.5V; Min Voltage Vgs th:2.5V; Power Dissipation:3.75W; Power Dissipation Pd:272W; Rds Measurement Voltage:10V; Rise Time:10ns; Transistor Case Style:TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
IRFB3307ZGPBF
DISTI # IRFB3307ZGPBF-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO-220AB
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IRFB3307ZGPBF
    DISTI # 70019674    		Infineon Technologies AGMOSFET,75V,120A,5.8 MOHM,79 NC QG,TO-220AB,HALOGEN-FREE
    RoHS: Compliant    		0
    • 500:$1.9300
    • 1000:$1.7700
    • 1500:$1.6300
    • 2000:$1.5200
    • 2500:$1.4100
    IRFB3307ZGPBF
    DISTI # 942-IRFB3307ZGPBF    		Infineon Technologies AGMOSFET MOSFT 75V 120A 5.8mOhm 79nC
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      IRFB33N15DPBF

      Mfr.#: IRFB33N15DPBF

      OMO.#: OMO-IRFB33N15DPBF

      		 MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC
      IRFB3306

      Mfr.#: IRFB3306

      OMO.#: OMO-IRFB3306-1190

      		 Neu und Original
      IRFB3306PBF

      Mfr.#: IRFB3306PBF

      OMO.#: OMO-IRFB3306PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 60V 120A TO-220AB
      IRFB3307

      Mfr.#: IRFB3307

      OMO.#: OMO-IRFB3307-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 75V 130A TO-220AB
      IRFB3307PBF , 2SK1066-20

      Mfr.#: IRFB3307PBF , 2SK1066-20

      OMO.#: OMO-IRFB3307PBF-2SK1066-20-1190

      		 Neu und Original
      IRFB3307PBF.

      Mfr.#: IRFB3307PBF.

      OMO.#: OMO-IRFB3307PBF--1190

      		 Neu und Original
      IRFB3307ZPBF-H

      Mfr.#: IRFB3307ZPBF-H

      OMO.#: OMO-IRFB3307ZPBF-H-1190

      		 Neu und Original
      IRFB3307ZTRLPBF

      Mfr.#: IRFB3307ZTRLPBF

      OMO.#: OMO-IRFB3307ZTRLPBF-1190

      		 Neu und Original
      IRFB33N15DPBF.

      Mfr.#: IRFB33N15DPBF.

      OMO.#: OMO-IRFB33N15DPBF--1190

      		 Neu und Original
      IRFB3307ZGPBF

      Mfr.#: IRFB3307ZGPBF

      OMO.#: OMO-IRFB3307ZGPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 75V 120A 5.8mOhm 79nC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von IRFB3307ZGPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,12 $
      2,12 $
      10
      2,01 $
      20,09 $
      100
      1,90 $
      190,35 $
      500
      1,80 $
      898,90 $
      1000
      1,69 $
      1 692,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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